N channel Power MOSFET Minos MPT04N10P Featuring Double Trench Design for Battery Management Systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPT04N10P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for Battery Management Systems (BMS) and high-current switching applications.
Product Attributes
- Brand: MNS (Shenzhen Minos Technology Co., Ltd.)
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V | |
| Continuous Drain Current | ID | 172 | A | Silicon Limited |
| Continuous Drain Current | ID | 120 | A | Package Limited |
| Continuous Drain Current | ID | 109.2 | A | TC = 100C, Silicon Limited |
| Pulsed Drain Current | IDM | 480 | A | Note1 |
| Gate-to-Source Voltage | VGS | 20 | V | |
| Avalanche Energy | EAS | 552 | mJ | Note2 |
| Power Dissipation | PD | 208 | W | |
| Derating Factor above 25C | 1.67 | W/ | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Maximum Temperature for Soldering | TL | 260 | ||
| Drain to Source Breakdown Voltage | VDSS | 100 (Typ: 110) | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current | IDSS | 1 | A | VDS=100V, VGS= 0V, Tj= 25 |
| Drain to Source Leakage Current | IDSS | 100 | A | VDS=80V, VGS= 0V, Tj= 125 |
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V |
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V |
| Drain-to-Source On- Resistance | RDS(ON) | 3.3 (Typ: 4) | m | VGS=10V, ID=50A(Note4) |
| Gate Threshold Voltage | VGS(TH) | 2.0 (Typ: 3.0, Max: 4.0) | V | VDS= VGS, ID= 250A(Note4) |
| Input Capacitance | Ciss | 6600 | PF | VGS= 0V, VDS= 50V, f = 1.0MHz |
| Output Capacitance | Coss | 1594 | PF | VGS= 0V, VDS= 50V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 150 | PF | VGS= 0V, VDS= 50V, f = 1.0MHz |
| Total Gate Charge | Qg | 114 | nC | ID =50A, VDD =50V, VGS = 10V |
| Gate to Source Charge | Qgs | 27 | nC | ID =50A, VDD =50V, VGS = 10V |
| Gate to Drain (Miller)Charge | Qgd | 24.5 | nC | ID =50A, VDD =50V, VGS = 10V |
| Turn-on Delay Time | td(ON) | 28 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Rise Time | tr | 27 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Turn-Off Delay Time | td(OFF) | 59 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Fall Time | tf | 30 | ns | VDD = 50V, VGS = 10V, RG =3, Resistive Load |
| Continuous Source Current | IS | 120 | A | TC=25 C |
| Maximum Pulsed Current | ISM | 480 | A | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=50A, VGS=0V(Note4) |
| Reverse Recovery Time | Trr | 70 | ns | IS=65A, Tj= 25C, dIF/dt=150A/us, VGS=0V |
| Reverse Recovery Charge | Qrr | 237 | nC | IS=65A, Tj= 25C, dIF/dt=150A/us, VGS=0V |
| Thermal Resistance (Junction-to-Case) | RJC | 0.6 | /W | |
| Thermal Resistance (Junction-to-Ambient) | RJA | 62.5 | /W |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina