Depletion Mode Normally On N Channel FET MICROCHIP DN2625DK6 G Ideal for Power Handling Applications
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Product Description
DN2625: N-Channel Depletion-Mode Vertical DMOS FET
The DN2625 is a low-threshold, depletion-mode (normally-on) transistor designed for high-speed switching and amplification applications. It features an advanced vertical DMOS structure for enhanced power handling and a positive temperature coefficient inherent in MOS devices, preventing thermal runaway. This device is ideal for applications requiring high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Material: Silicon Gate Manufacturing Process, Vertical DMOS structure
- Certifications: Pb-free (for specific package types)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-to-source Breakdown Voltage | BVDSX | 250 | V | VGS = 2.5V, ID = 50 A | ||
| Drain-to-gate Breakdown Voltage | BVDGX | 250 | V | VGS = 2.5V, ID = 50 A | ||
| Gate-to-source Off Voltage | VGS(OFF) | 1.5 | 2.1 | V | VDS = 15V, ID = 100 A | |
| Change in VGS(OFF) with Temperature | VGS(OFF) | 4.5 | mV/C | VDS = 15V, ID = 100 A | ||
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Drain-to-source Leakage Current | ID(OFF) | 1 | A | VDS = 250V, VGS = 5V | ||
| Drain-to-source Leakage Current (at 125C) | ID(OFF) | 200 | A | VDS = 250V, VGS = 5V, TA = 125C | ||
| Saturated Drain-to-source Current | IDSS | 1.1 | A | VGS = 0V, VDS = 15V | ||
| Pulsed Drain-to-source Current | IDS(PULSE) | 3.1 | 3.3 | A | VGS = 0.9V, VDS = 15V (With duty cycle of 1%) | |
| Static Drain-to-source On-resistance | RDS(ON) | 3.5 | VGS = 0V, ID = 1A | |||
| Change in RDS(ON) with Temperature | RDS(ON) | 1.1 | %/C | VGS = 0V, ID = 200 mA | ||
| Forward Transconductance | GFS | 100 | mmh0 | VDS = 10V, ID = 150 mA | ||
| Input Capacitance | CISS | 800 | 1000 | pF | VGS = 2.5V, VDS = 25V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 70 | 210 | pF | VGS = 2.5V, VDS = 25V, f = 1 MHz | |
| Reverse Transfer Capacitance | CRSS | 18 | 70 | pF | VGS = 2.5V, VDS = 25V, f = 1 MHz | |
| Turn-on Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 150 mA, RGEN = 3, VGS = 0V to 10V | ||
| Rise Time | tr | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 3, VGS = 0V to 10V | ||
| Turn-off Delay Time | td(OFF) | 10 | ns | VDD = 25V, ID = 150 mA, RGEN = 3, VGS = 0V to 10V | ||
| Fall Time | tf | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 3, VGS = 0V to 10V | ||
| Total Gate Charge | QG | 7.04 | nC | ID = 3.5A, VDS = 100V, VGS = 1.5V | ||
| Gate-to-source Charge | QGS | 0.783 | nC | ID = 3.5A, VDS = 100V, VGS = 1.5V | ||
| Gate-to-drain Charge | QGD | 3.73 | nC | ID = 3.5A, VDS = 100V, VGS = 1.5V | ||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 2.5V, ISD = 150 mA | ||
| Operating Ambient Temperature | TA | 55 | 150 | C | ||
| Storage Temperature | TS | 55 | 150 | C | ||
| Soldering Temperature | 300 | C | Note 1 | |||
| Package Thermal Resistance (TO-252 D-PAK) | JA | 81 | C/W | Note 2 | ||
| Package Thermal Resistance (8-lead DFN Dual Pad) | JA | 29 | C/W | Note 3 |
Note 1: Distance of 1.6 mm from case for 10 seconds.
Note 2: Four-layer, 1-oz, 3 x 4-inch PCB with 20 via for drain pad.
Note 3: Four-layer, 1-oz, 3 x 4-inch PCB with 12 via for drain pad.
Applications
- Medical Ultrasound Beamforming
- Ultrasonic Array-focusing Transmitter
- Piezoelectric Transducer Waveform Drivers
- High-speed Arbitrary Waveform Generator
- Normally-on Switches
- Solid-state Relays
- Constant Current Sources
- Power Supply Circuits
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