Robust P Channel Power MOSFET Minos MDT35P10D Offering 110 Volt VDS and 35 Amp Drain Current Rating
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Product Description
Product Overview
The MDT35P10D is a P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON) performance. It is suitable for a wide range of applications, offering low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing. Key features include VDS=-110V and ID=-35A.
Product Attributes
- Brand: SHENZHEN MINOS TECHOLOGY CO.,LTD
- Origin: China (implied by company name and website)
- Model: MDT35P10D
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Breakdown Voltage | VDSS | @Ta=25 | -110 | V | ||
| Drain Current (continuous) | ID | @Tc=25 | -35 | A | ||
| Drain Current (pulsed) | IDM | -120 | A | |||
| Gate to Source Voltage | VGS | +/-20 | V | |||
| Total Dissipation | Ptot | @Tc=25 | 180 | W | ||
| Max. Operating Junction Temperature | Tj Max. | 175 | ||||
| Single Pulse Avalanche Energy | EAS | 700 | mJ | |||
| Electrical Parameters | ||||||
| Drain-source Voltage | VDS | VGS =0V, ID=-250A | -100 | V | ||
| Static Drain-to-Source on-Resistance | RDS(on) | VGS =-10V, ID=-15A | 26 | 32 | m | |
| Gated Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -2.0 | -3.0 | V |
| Drain to Source leakage Current | IDSS | VDS=-110V, VGS = 0V | -1.0 | A | ||
| Gated Body Foward Leakage | IGSS(F) | VGS = +20V | 100 | nA | ||
| Gated Body Reverse Leakage | IGSS(R) | VGS = -20V | -100 | nA | ||
| Input Capacitance | Ciss | VGS =0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Output Capacitance | Coss | VGS =0V, VDS=25V, f=1.0MHZ | 190 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS =0V, VDS=25V, f=1.0MHZ | 11 | pF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V,ID=-16A, RG=10 | 28 | nS | ||
| Turn-on Rise Time | tr | VDD=-20V,ID=-16A, RG=10 | 21 | nS | ||
| Turn-off Delay Time | td(off) | VDD=-20V,ID=-16A, RG=10 | 62 | nS | ||
| Turn-off Fall Time | tf | VDD=-20V,ID=-16A, RG=10 | 32 | nS | ||
| Total Gate Charge | Qg | VDS=-20V ID=-16A VGS=-10V | 40 | nC | ||
| Gate-Source Charge | Qgs | VDS=-20V ID=-16A VGS=-10V | 9.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-20V ID=-16A VGS=-10V | 14 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| S-D Current(Body Diode) | ISD | -35 | A | |||
| Pulsed S-D Current(Body Diode) | ISDM | -140 | A | |||
| Diode Forward Voltage | VSD | VGS =0V, IDS=-35A | -1.5 | V | ||
| Reverse Recovery Time | trr | TJ=25,IF=-35A di/dt=100A/us | 555 | nS | ||
| Reverse Recovery Charge | Qrr | TJ=25,IF=-35A di/dt=100A/us | 4550 | C | ||
| Thermal Resistance | ||||||
| Junction-to-Case | RJC | 2.5 | /W | |||
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