Silicon P Channel Power MOSFET Minos MDT40P10D for Power Switching Adapters and Chargers Applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The MDT40P10D is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications including power switching, adapters, and chargers.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Material: Silicon
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | |||||
| VDS Drain-to-Source Breakdown Voltage | -100 | V | |||
| ID Drain Current (continuous) | at Tc=25 | -40 | A | ||
| IDM Drain Current (pulsed) | -120 | A | |||
| VGS Gate to Source Voltage | +/-20 | V | |||
| Ptot Total Dissipation | at Tc=25 | 180 | W | ||
| Tj Max. Operating Junction Temperature | 175 | ||||
| EAS Single Pulse Avalanche Energy | 700 | mJ | |||
| Electrical Parameters | |||||
| VDS Drain-source Voltage | VGS =0V, ID=-250A | -100 | V | ||
| RDS(on) Static Drain-to-Source on-Resistance | VGS =-10V, ID=-15A | 26 | 32 | m | |
| VGS(th) Gated Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -2.0 | -3.0 | V |
| IDSS Drain to Source leakage Current | VDS=-110V, VGS = 0V | -1.0 | A | ||
| IGSS(F) Gated Body Foward Leakage | VGS= +20V | 100 | nA | ||
| IGSS(R) Gated Body Reverse Leakage | VGS = -20V | -100 | nA | ||
| Ciss Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Coss Output Capacitance | 190 | pF | |||
| Crss Reverse Transfer Capacitance | 11 | pF | |||
| Switching Characteristics | |||||
| td(on) Turn-on Delay Time | VDD=-20V,ID=-16A, RG=10 | 28 | nS | ||
| tr Turn-on Rise Time | 21 | nS | |||
| td(off) Turn-off Delay Time | 62 | nS | |||
| tf Turn-off Fall Time | 32 | nS | |||
| Qg Total Gate Charge | VDS=-20V ID=-16A VGS=-10V | 40 | nC | ||
| Qgs Gate-Source Charge | 9.2 | nC | |||
| Qgd Gate-Drain Charge | 14 | nC | |||
| Source-Drain Diode Characteristics | |||||
| IS S-D Current(Body Diode) | -40 | A | |||
| ISDM Pulsed S-D Current(Body Diode) | -140 | A | |||
| VSD Diode Forward Voltage | VGS =0V, IDS=-35A | -1.5 | V | ||
| trr Reverse Recovery Time | TJ=25,IF=-35A di/dt=100A/us | 555 | nS | ||
| Qrr Reverse Recovery Charge | 4550 | C | |||
| Thermal Characteristics | |||||
| RJC Junction-to-Case | 2.5 | /W | |||
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