Power MOSFET Silicon N Channel Minos MDT70N03 Featuring Low Gate Charge and High Pulsed Drain Current
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Product Description
Product Overview
The MDT70N03 is a high-performance Silicon N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key advantages include a high-density cell design for ultra-low Rdson, fully characterized avalanche energy, good stability, and excellent heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | (TC=25) | 70 | A | ||
| Drain Current-Continuous(TC=100) | ID(100) | 35 | A | |||
| Pulsed Drain Current | IDM | 140 | A | |||
| Maximum Power Dissipation | PD | (TC=25) | 60 | W | ||
| Derating factor | 0.4 | W/ | ||||
| Single pulse avalanche energy | EAS | (Note 5) | 225 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | (Note 2) | 2.5 | /W | ||
| Electrical Characteristics (TC=25unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | 33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.1 | 1.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A | - | 6 | 8 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 8 | 12 | mΩ |
| Forward Transconductance | gFS | VDS=5V,ID=20A | 15 | - | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=15V,VGS=0V, F=1.0MHz | - | 2000 | - | PF |
| Output Capacitance | Coss | - | 280 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 160 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=15V,ID=25A VGS=10V,RGEN=1.8 | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 30 | - | nS | |
| Turn-Off Fall Time | tf | - | 5 | - | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=25A, VGS=10V | - | 23 | - | nC |
| Gate-Source Charge | Qgs | - | 7 | - | nC | |
| Gate-Drain Charge | Qg d | - | 4.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=25A (Note 3) | - | 0.85 | 1.2 | V |
| Diode Forward Current | IS | (Note 2) | - | - | 50 | A |
| Reverse Recovery Time | trr | TJ = 25C, IF = 25A di/dt = 100A/s(Note3) | - | 22 | 35 | nS |
| Reverse Recovery Charge | Qrr | - | 11 | 18 | nC | |
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