Compact SOT363 package Nexperia NHUMD2X transistor with 80 volt collector emitter voltage and 100 milliamp output current
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Product Description
Product Overview
The NHUMD3/2/12 series comprises NPN/PNP resistor-equipped double transistors (RET) in a compact SOT363 (SC-88) SMD plastic package. These devices offer an 80 V breakdown voltage and 100 mA output current capability, featuring built-in resistors that simplify circuit design, reduce component count, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for various digital applications, serving as a cost-effective alternative to BC846/BC856 series in digital circuits, for controlling IC inputs, and switching loads.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Qualification: AEC-Q101
Technical Specifications
| Model | R1 (k) | R2 (k) | NPN/NPN Complement | PNP/PNP Complement | Collector-Emitter Voltage (VCEO) | Output Current (IO) |
|---|---|---|---|---|---|---|
| NHUMD3 | 10 | 10 | NHUMH11 | NHUMB11 | 80 V | 100 mA |
| NHUMD2 | 22 | 22 | NHUMH1 | NHUMB1 | 80 V | 100 mA |
| NHUMD12 | 47 | 47 | NHUMH2 | NHUMB2 | 80 V | 100 mA |
Key Characteristics (Per Transistor, PNP with negative polarity)
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 80 | V |
| Output Current (IO) | - | - | - | 100 | mA |
| Collector-Base Breakdown Voltage (V(BR)CBO) | IC = 100 A; IE = 0 A | 80 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | IC = 2 mA; IB = 0 A | 80 | - | - | V |
Resistor Values (Bias Resistor 1 - R1)
| Type Number | Min | Typ | Max | Unit |
|---|---|---|---|---|
| NHUMD3 | 7 | 10 | 13 | k |
| NHUMD2 | 15.4 | 22 | 28.6 | k |
| NHUMD12 | 33 | 47 | 61 | k |
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