Minos AO3400S MOSFET with trench technology providing low RDS ON and high power switching capability

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The AO3400S is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It is suitable for load switch and general applications, featuring high power and current handling capability. The device is lead-free and RoHS compliant.

Product Attributes

Brand: Shenzhen Minos (implied from website and contact info)
Origin: China (implied from contact info)
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Drain-Source On-Resistance	RDS(ON)	VGS=10V, ID=5A		24	33	m
		VGS =4.5V, ID =4A		26	39	m
		VGS =2.5V, ID =3A		33	55	m
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250uA	30			V
Gate-Threshold Voltage	Vth(GS)	VDS= VGS, ID=250 uA	0.7	0.9	1.2	V
Gate-body Leakage	IGSS	VDS=0V, VGS=12V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0V			-1	uA
Continuous Drain Current	ID	(TA=25)			5.1	A
Pulsed Drain Current	IDM	(TA=25)			20	A
Maximum Power Dissipation	PD	(TA=25)			1.3	W
Junction and Storage Temperature Range	TJ, TSTG		-55		150
Thermal Resistance, Junction to Ambient	RQJA			96		/W
Input Capacitance	Ciss	VDS=15V, VGS=0V, F=1MHz		595		pF
Output Capacitance	Coss	VDS=15V, VGS=0V, F=1MHz		39		pF
Reverse Transfer Capacitance	Crss	VDS=15V, VGS=0V, F=1MHz		36		pF
Turn-on Delay Time	td(on)	VDD= 15V, RL=3, VGS = 10V, RGEN=3		3.0		nS
Turn-on Rise Time	tr	VDD= 15V, RL=3, VGS = 10V, RGEN=3		4.5		nS
Turn-off Delay Time	td(off)	VDD= 15V, RL=3, VGS = 10V, RGEN=3			25	nS
Turn-off Fall Time	tf	VDD= 15V, RL=3, VGS = 10V, RGEN=3		3.8		nS
Total Gate Charge	Qg	VDS = 15V, ID=5A, VGS =4.5V		9.3		nC
Gate-Source Charge	Qgs	VDS = 15V, ID=5A, VGS =4.5V		1.6		nC
Gate-Drain Charge	Qg	VDS = 15V, ID=5A, VGS =4.5V		2.1		nC
Diode Forward Voltage	VSD	VGS =0V, ID=5A			1.2	V