switching transistor Minos MDT9N20 silicon MOSFET designed for high frequency power supply circuits
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Product Description
Product Overview
The MDT9N20 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology. It is designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is well-suited for applications such as SMPS, high-speed switching, and general-purpose use.
Product Attributes
- Brand: MNS
- Material: Silicon
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Description |
| VDS | 200 | V | Drain-to-Source Voltage |
| ID | 9 | A | Continuous Drain Current |
| RDS(ON).Typ | 0.27 | Drain-to-Source On-Resistance (Typical) | |
| Features | Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability | ||
| Applications | High frequency switching mode power supply | ||
| Package Options | TO-220, TO-220F, TO-251, TO-252 | ||
| Continuous Drain Current (TC=100C) | 5.5 | A | |
| Pulsed Drain Current (IDM) | 36 | A | |
| Gate-to-Source Voltage (VGS) | 30 | V | |
| Single Pulse Avalanche Energy (EAS) | 200 | mJ | |
| Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| Power Dissipation (TO-220, TO-251, TO-252) | 75 | W | Derating Factor above 25C: 0.6 W/ |
| Power Dissipation (TO-220F) | 30 | W | Derating Factor above 25C: 0.24 W/ |
| Operating Junction and Storage Temperature Range | -55 to 150 | ||
| Drain to Source Breakdown Voltage | 200 | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current (Tj=25C) | 1 | A | VDS=200V, VGS=0V |
| Gate Threshold Voltage | 2.0 - 4.0 | V | VDS=VGS, ID=250A |
| Input Capacitance (Ciss) | 550 | PF | VGS=0V, VDS=25V, f=1.0MHz |
| Output Capacitance (Coss) | 90 | PF | VGS=0V, VDS=25V, f=1.0MHz |
| Reverse Transfer Capacitance (Crss) | 8.6 | PF | VGS=0V, VDS=25V, f=1.0MHz |
| Turn-on Delay Time (td(ON)) | 10 | ns | ID=9A, VDD=100V, VGS=10V, RG=5 |
| Rise Time (tr) | 5 | ns | ID=9A, VDD=100V, VGS=10V, RG=5 |
| Turn-Off Delay Time (td(OFF)) | 20 | ns | ID=9A, VDD=100V, VGS=10V, RG=5 |
| Fall Time (tf) | 7 | ns | ID=9A, VDD=100V, VGS=10V, RG=5 |
| Total Gate Charge (Qg) | 12 | nC | ID=9A, VDD=160V, VGS=10V |
| Continuous Source Current (Body Diode) | 9 | A | TC=25C |
| Diode Forward Voltage (VSD) | 1.2 | V | IS=9A, VGS=0V |
| Reverse Recovery Time (Trr) | 110 | ns | IS=9A, dIF/dt=100A/us, VGS=0V, Tj=25C |
| Reverse Recovery Charge (Qrr) | 465 | nC | IS=9A, dIF/dt=100A/us, VGS=0V, Tj=25C |
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