Mini Circuits SAV 551 Plus Ultra Low Noise E PHEMT Transistor Medium Current Device for Base Station
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Product Description
Mini-Circuits SAV-551+ Ultra Low Noise, Medium Current E-PHEMT Transistor
Product Overview
The SAV-551+ is an ultra-low noise, high IP3 transistor device manufactured using E-PHEMT* technology, enabling operation with a single positive supply voltage. It offers an outstanding Noise Figure, particularly below 2.5 GHz, and high IP3 performance, making it an ideal amplifier for demanding base station applications. These units can also be supplied assembled into a complete module with 50 in/out, noise matched, and fully specified.
Product Attributes
- Brand: Mini-Circuits
- Technology: E-PHEMT*
- Compliance: +RoHS Compliant
- Package Style: MMM1362 (SOT-343 / SC-70)
- Lead Finish: Matte Tin
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| DC Specifications | |||||
| Operational Gate Voltage (VGS) | VDS=3V, IDS=15 mA | 0.22 | 0.34 | 0.46 | V |
| Threshold Voltage (VTH) | VDS=3V, IDS=4 mA | 0.18 | 0.26 | 0.38 | V |
| Saturated Drain Current (IDSS) | VDS=3V, VGS=0 V | 1.0 | 5.0 | µA | |
| Transconductance (GM) | VDS=3V, Gm= IDS/VGS | 215 | 285 | mS | |
| Gate Leakage Current (IGSS) | VGD=VGS=-3V | 95 | µA | ||
| RF Specifications, Z0=50 Ohms | |||||
| Noise Figure (NF) | VDS=3V, IDS=15 mA, f=0.9 GHz | 0.5 | dB | ||
| Noise Figure (NF) | VDS=3V, IDS=15 mA, f=2.0 GHz | 0.6 | 0.9 | dB | |
| Noise Figure (NF) | VDS=3V, IDS=15 mA, f=3.9 GHz | 1.0 | dB | ||
| Noise Figure (NF) | VDS=3V, IDS=15 mA, f=5.8 GHz | 1.8 | dB | ||
| Gain | VDS=3V, IDS=15 mA, f=0.9 GHz | 20.9 | dB | ||
| Gain | VDS=3V, IDS=15 mA, f=2.0 GHz | 14.4 | 15.9 | 17.5 | dB |
| Gain | VDS=3V, IDS=15 mA, f=3.9 GHz | 11.2 | dB | ||
| Gain | VDS=3V, IDS=15 mA, f=5.8 GHz | 7.6 | dB | ||
| Output IP3 (OIP3) | VDS=3V, IDS=15 mA, f=0.9 GHz | 22.4 | dBm | ||
| Output IP3 (OIP3) | VDS=3V, IDS=15 mA, f=2.0 GHz | 20.0 | 24.3 | dBm | |
| Output IP3 (OIP3) | VDS=3V, IDS=15 mA, f=3.9 GHz | 26.9 | dBm | ||
| Output IP3 (OIP3) | VDS=3V, IDS=15 mA, f=5.8 GHz | 28.5 | dBm | ||
| Power Output at 1 dB Comp. (P1dB) | VDS=3V, IDS=15 mA, f=0.9 GHz | 17.2 | dBm | ||
| Power Output at 1 dB Comp. (P1dB) | VDS=3V, IDS=15 mA, f=2.0 GHz | 16.0 | 17.5 | dBm | |
| Power Output at 1 dB Comp. (P1dB) | VDS=3V, IDS=15 mA, f=3.9 GHz | 18.5 | dBm | ||
| Power Output at 1 dB Comp. (P1dB) | VDS=3V, IDS=15 mA, f=5.8 GHz | 17.5 | dBm | ||
| Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 5 | V | |||
| Gate-Source Voltage (VGS) | -5 | 0.7 | V | ||
| Gate-Drain Voltage (VGD) | -5 | 0.7 | V | ||
| Drain Current (IDS) | 100 | mA | |||
| Gate Current (IGS) | 2 | mA | |||
| Total Dissipated Power (PDISS) | 360 | mW | |||
| RF Input Power (PIN) | 17 | dBm | |||
| Channel Temperature (TCH) | 150 | °C | |||
| Operating Temperature (TOP) | -40 | 85 | °C | ||
| Storage Temperature (TSTD) | -65 | 150 | °C | ||
| Thermal Resistance (ΘJC) | 160 | °C/W | |||
Applications
- Cellular
- ISM
- GSM
- WCDMA
- WiMax
- WLAN
- UNII and HIPERLAN
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina