Silicon N Channel MOSFET Minos IRF3710STR Ideal for SMPS and General Purpose Electronic Applications

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Product Description

The IRF3710STR is a silicon N-Channel Enhanced MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key advantages include reduced conduction loss, faster switching, 100% avalanche testing, and improved dv/dt capability.

Product Attributes

Brand: www.mns-kx.com (Implied by URL)
Origin: Shenzhen Minos (Implied by Contact Information)
Material: Silicon N-Channel (Derived from text)
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit	Min.	Typ.	Max.
Absolute Maximum Ratings	VDSS	VGS= 0V	100	V
	ID	TC = 25	70	A
	IDM		Figure 6	A
	VGSS		20	V
	EAS		1943	mJ
	EAR		36	mJ
Electrical Characteristics	V(BR)DSS	VGS= 0V, ID = 250A	100	V
	IDSS	VDS = 100V, VGS = 0V, TJ = 25		1	A
	IGSS	VGS= +20V,VDS=0V		100	nA
	VGS(th)	VDS = VGS, ID = 250A		2.0	4.0	V
	RDS(on)	VGS = 10V, ID= 28A		17	21	m
	gfs	VDS= 10V, ID = 28A	85	S
	Ciss	VGS= 0V, VDS = 25V, f = 1.0MHz		2700	pF
Dynamic Characteristics	Coss			610	pF
	Crss			260	pF
	Qg	VDD =50V, ID= 28A, VGS = 0 to 10V		60	nC
	td(on)	VDD = 50V, ID=28A, VGS= 10V, RG = 2.5		20	ns
Body Diode Characteristics	IS	TC= 25		70	A
	ISM			230
	VSD	TJ= 25, ISD = 28A, VGS = 0V			1.5	V
	trr	VGS = 0V,IS = 28A, diF/dt =100A /s		195	ns
Thermal Resistance	RthJC		0.75	/W
Thermal Resistance	RthJA		62	/W