High Current Minos IRFZ24N N-Channel MOSFET 60V 30A TO220 Package for Power Switching Solutions

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Product Description

Product Overview

The IRFZ24N is a N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.

Product Attributes

Brand: MNS-KX
Package: TO-220

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Key Characteristics
Drain-Source Voltage	VDS				60	V
Continuous Drain Current	ID				30	A
RDS(ON)		VGS=10V		25	30	m
RDS(ON)		VGS=4.5V		30	40	m
Absolute Maximum Ratings
Drain-Source Voltage	VDS				60	V
Gate-Source Voltage	VGS			20		V
Drain Current-Continuous	ID				30	A
Drain Current-Pulsed	IDM	Note 1			80	A
Maximum Power Dissipation	PD	Tc=25			44	W
Single pulse avalanche energy	EAS	Note 2			56	mJ
Operating Junction and Storage Temperature Range	TJ,TSTG		-55		175
Thermal Characteristic
Thermal Resistance,Junction-to-Case	RJC			3.4		/W
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	60	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=60V,VGS=0V	-	-	1	A
Gate-Body Leakage Current	IGSS	VGS=20V,VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=250A	1.3	1.8	2.3	V
Drain-Source On-State Resistance	RDS(ON)	VGS=10V, ID=10A, Note 3	-	25	30	m
Drain-Source On-State Resistance	RDS(ON)	VGS=4.5V, ID=10A, Note 3	-	30	40	m
Forward Transconductance	gFS	VDS=5V,ID=10A	-	11	-	S
Dynamic Characteristics
Input Capacitance	Clss	VDS=25V,VGS=0V, f=1.0MHz	-	670	-	pF
Output Capacitance	Coss		-	76	-	pF
Reverse Transfer Capacitance	Crss		-	66	-	pF
Switching Characteristics
Turn-on Delay Time	td(on)	VDD=30V, ID=10A, VGS=10V,RGEN=10, Note 4	-	19.2	-	nS
Turn-on Rise Time	tr	Note 4	-	6.4	-	nS
Turn-Off Delay Time	td(off)	Note 4	-	29.2	-	nS
Turn-Off Fall Time	tf	Note 4	-	8.2	-	nS
Total Gate Charge	Qg	VDS=48V,ID=10A, VGS=10V	-	21	-	nC
Gate-Source Charge	Qgs		-	5	-	nC
Gate-Drain Charge	Qg d		-	6.5	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V,IS=20A	-	-	1.2	V
Reverse Recovery Time	Trr	Tj=25,IF=10A,di/dt=100A/uS, note3	-	33.6	-	nS
Reverse Recovery Charge	Qrr		-	32.1	-	nC