Darlington transistor Minos MJD122 designed for circuits requiring high gain and built in damping diode

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Product Description

Product Overview

This Darlington transistor is designed for high-gain circuits and includes a built-in damping diode. It is suitable for applications requiring significant amplification.

Product Attributes

Brand: MNS (Shenzhen Minos Technology Co., Ltd.)
Package Type: TO-252
Origin: Shenzhen, China

Technical Specifications

Parameter	Symbol	Min	Typical	Max	Unit	Test Conditions
Collector-Base Breakdown Voltage	BVCBO	100			V	IC=1mA, IE=0
Collector-Emitter Breakdown Voltage	BVCEO	100			V	IC=5mA, IB=0
Collector-Emitter Cutoff Current	ICEO		0.5		mA	VCE=50V, IB=0
Collector-Base Cutoff Current	ICBO		0.2		mA	VCB=100V, IE=0
Emitter-Base Cutoff Current	IEBO		2.0		mA	VEB=5V, IC=0
DC Current Gain	HFE	1000				VCE=3V, IC=0.5A
Collector-Emitter Saturation Voltage	VCE(sat1)		2.0		V	IC=3A, IB=12mA
Collector-Emitter Saturation Voltage	VCE(sat2)		4.0		V	IC=5A, IB=20mA
Base-Emitter On Voltage	VBE(on)		2.5		V	VCE=3V, IC=3A
Common Base Output Capacitance	Cob		200		pF	VCB=10V, IE=0, f=0.1MHz
Storage Temperature	Ts	-65		150
Junction Temperature	Tj			150
Collector Dissipation Power (Tc=25)	PC			65	W
Collector Dissipation Power (TA=25)	PC			2	W
Collector-Base Voltage	VCBO			100	V
Collector-Emitter Voltage	VCEO			100	V
Emitter-Base Voltage	VEBO			5	V
Collector Current	IC			5	A
Collector Current (Pulse)	ICP			8	A
Base Current	IB			120	mA