60V N Channel Power MOSFET Minos MPG30N06 Featuring Low Gate Charge and High Stability for Switching
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The MPG30N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. This product is 100% UIS and DVDS tested.
Product Attributes
- Brand: MNS-KX (implied from URL)
- Product Code: MPG30N06
- Device Marking: 30N06
- Package: TO-220
- Color: Green Product
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
- Origin: Shanghai Belli (implied from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Key Characteristics | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 20 | A | |||
| RDS(ON) | RDS(ON) | VGS=10V | 25 | 30 | m | |
| RDS(ON) | RDS(ON) | VGS=4.5V | 30 | 40 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | 60 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 20 | V | ||
| Drain Current-Continuous | ID | TA=25 | 20 | A | ||
| Drain Current-Pulsed | IDM | Note 1 | 80 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 44 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 56 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 3.4 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.3 | 1.8 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A | - | 25 | 30 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 30 | 40 | m |
| Forward Transconductance | gFS | VDS=5V,ID=10A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 670 | - | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | - | 76 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | - | 66 | - | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V,RGEN=10 | - | 19.2 | - | nS |
| Turn-on Rise Time | tr | VDD=30V, ID=10A, VGS=10V,RGEN=10 | - | 6.4 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V, ID=10A, VGS=10V,RGEN=10 | - | 29.2 | - | nS |
| Turn-Off Fall Time | tf | VDD=30V, ID=10A, VGS=10V,RGEN=10 | - | 8.2 | - | nS |
| Total Gate Charge | Qg | VDS=48V,ID=10A, VGS=10V | - | 21 | - | nC |
| Gate-Source Charge | Qgs | VDS=48V,ID=10A, VGS=10V | - | 5 | - | nC |
| Gate-Drain Charge | Qg d | VDS=48V,ID=10A, VGS=10V | - | 6.5 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25IF=10Adi/dt=100A/uS note3 | - | 33.6 | - | nS |
| Reverse Recovery Charge | Qrr | Tj=25IF=10Adi/dt=100A/uS note3 | - | 32.1 | - | nC |
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Sellina