High Speed Switching Silicon MOSFET Minos MPF40N25 with RoHS Certification and Enhanced Performance

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Product Description

Product Overview

The MPF40N25 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal device for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.

Product Attributes

Brand: MNS
Origin: Shenzhen Minos (implied from contact information)
Material: Silicon
Certifications: RoHS product

Technical Specifications

Parameter	Value	Unit	Conditions	Notes
KEY CHARACTERISTICS
VDS	250	V
ID	40	A
RDS(ON).Typ	0.065
FEATURES
Fast Switching Low Crss 100% avalanche tested Improved dv/dt capability RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes	Package	Product Code	Packing
	TO-220F	MPF40N25	Tube
ABSOLUTE RATINGS
Parameter	Rating	Units	TC = 25C, unless otherwise specified
VDSS	250	V
ID	40	A	Continuous Drain Current
ID	26	A	Continuous Drain Current TC = 100 C
IDM	160	A	Pulsed Drain Current	(Note1)
VGS	30	V
EAS	2000	mJ	Single Pulse Avalanche Energy	(Note2)
dv/dt	5.0	V/ns	Peak Diode Recovery dv/dt	(Note3)
PD	310	W	Power Dissipation
Derating Factor above 25C	2.78	W/
TJ, Tstg	55 to 150		Operating Junction and Storage Temperature Range
TL	300		Maximum Temperature for Soldering
Thermal characteristics
Symbol	Parameter	RATINGS	Units	TO-220F
RJC	Junction-to-Case	0.36	/W
RJA	Junction-to-Ambient	62.5	/W
Electrical Characteristics
Symbol	Parameter	Test Conditions	Values (Min. Typ. Max.)	Units
OFF Characteristics
VDSS	Drain to Source Breakdown Voltage	VGS=0V, ID=250A	250 -- --	V
BVDSS/ TJ	Bvdss Temperature Coefficient	ID=250uA, Reference25	-- 0.18 --	V/
IDSS	Drain to Source Leakage Current	VDS =250V, VGS= 0V, Tj = 25	-- -- 1	A
IDSS	Drain to Source Leakage Current	VDS =200V, VGS= 0V, Tj= 125	-- -- 10	A
IGSS(F)	Gate to Source Forward Leakage	VGS =+30V	-- -- 100	nA
IGSS(R)	Gate to Source Reverse Leakage	VGS =-30V	-- -- -100	nA
ON Characteristics
RDS(ON)	Drain-to-Source On- Resistance	VGS=10V, ID=20A(Note4)	-- 0.065 0.08
VGS(TH)	Gate Threshold Voltage	VDS = VGS, ID= 250A(Note4)	2.0 -- 4.0	V
gfs	Forward Transconductance	VDS=40V, ID=20A(Note4)	-- 27 --	S
Dynamic Characteristics
Rg	Gate resistance	f = 1.0MHz	-- 1.8 --
Ciss	Input Capacitance	VGS = 0V VDS = 25V f = 1.0MHz	-- 3700 --	PF
Coss	Output Capacitance		-- 360 --	PF
Crss	Reverse Transfer Capacitance		-- 2.5 --	PF
Switching Characteristics
td(ON)	Turn-on Delay Time	ID=40A VDD= 125V VGS= 10V RG =15	-- 80 --	ns
tr	Rise Time		-- 620 --	ns
td(OFF)	Turn-Off Delay Time		-- 140 --	ns
tf	Fall Time		-- 183 --	ns
Qg	Total Gate Charge	ID=40A VDD=200V VGS = 10V	-- 40 --	nC
Qgs	Gate to Source Charge		-- 14 --	nC
Qgd	Gate to Drain (Miller)Charge		-- 11 --	nC
Source-Drain Diode Characteristics
IS	Continuous Source Current (Body Diode)	TC=25 C	-- -- 40	A
ISM	Maximum Pulsed Current (Body Diode)		-- -- 160	A
VSD	Diode Forward Voltage	IS=40A, VGS=0V(Note4)	-- -- 1.2	V
Trr	Reverse Recovery Time	IS=40A, Tj = 25C dIF/dt=100A/us,	-- 230 --	ns
Qrr	Reverse Recovery Charge		-- 2150 --	nC
Notes
Note1: Pulse width limited by maximum junction temperature
Note2: L=10mH, VDs=50V, Start TJ=25
Note3: ISD =40A,di/dt 100A/us,VDDBVDS, Start TJ=25
Note4: Pulse width tp300s, 2%
TO-220F Package Dimensions
Items	Values(mm)	MIN	MAX
A	9.60	10.4
B	15.4	16.2
B1	8.90	9.50
C	4.30	4.90
C1	2.10	3.00
D	2.40	3.00
E	0.60	1.00
F	0.30	0.60
G	1.12	1.42
H	3.40	3.80
I	1.60	2.90
L	12.0	14.0
N	2.34	2.74
Q	3.15	3.55