Silicon N Channel Power MOSFET Minos MPG55N06 with 60V VDS and 200A Pulsed Drain Current Capability
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Product Description
Product Overview
The MPG55N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, including power switching and load switching. Key features include a VDS of 60V, a continuous ID of 55A, and low ON resistance. The device also boasts low reverse transfer capacitances and undergoes 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Limited Parameters | ||||||
| VDSS | Drain-to-Source Breakdown Voltage | 60 | V | |||
| ID | Drain Current (continuous) at TC=25 | 55 | A | |||
| IDM | Drain Current (pulsed) | 200 | A | |||
| VGS | Gate to Source Voltage | +/-20 | V | |||
| Ptot | Total Dissipation at TC=25 | 100 | W | |||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| EAS | Single Pulse Avalanche Energy | 256 | mJ | |||
| Electrical Parameters | ||||||
| VDS | Drain-source Voltage | VGS=0V, ID=250A | 60 | 66 | V | |
| RDS(on) | Static Drain-to-Source on-Resistance | VGS =10V, ID=25A | 11.0 | 14 | m | |
| RDS(on) | Static Drain-to-Source on-Resistance | VGS =4.5V, ID=15A | 12.5 | 16 | m | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.9 | 2.5 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS = 0V | 1.0 | A | ||
| IGSS(F) | Gated Body Leakage Current | VGS = +20V | 100 | nA | ||
| IGSS(R) | Gated Body Leakage Current | VGS = -20V | -100 | nA | ||
| Ciss | Input Capacitance | VGS =0V, VDS=25V, f=1.0MHZ | 2200 | pF | ||
| Coss | Output Capacitance | 225 | pF | |||
| Crss | Reverse Transfer Capacitance | 165 | pF | |||
| Qg | Total Gate Charge | VDS=25V ID=10A VGS=10V | 58 | nC | ||
| Qgs | Gate-Source Charge | 6 | nC | |||
| Qgd | Gate-Drain Charge | 15 | nC | |||
| td(on) | Turn-on Delay Time | VDD=25V,ID=10A,RL=0.3 VGS=10V,RG=6.8 | 20 | nS | ||
| tr | Turn-on Rise Time | 90 | nS | |||
| td(off) | Turn-off Delay Time | 45 | nS | |||
| tf | Turn-off Fall Time | 90 | nS | |||
| ISD | S-D Current(Body Diode) | 50 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 200 | A | |||
| VSD | Diode Forward Voltage | VGS =0V, IDS=25A | 1.4 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=25A di/dt=100A/us | 102 | nS | ||
| Qrr | Reverse Recovery Charge | 50 | nC | |||
| RJC | Junction-to-Case | 1.3 | /W | |||
Package Description (TO-220)
| Item | MIN | MAX | Values(mm) |
|---|---|---|---|
| A | 9.60 | 10.60 | |
| B | 15.00 | 16.00 | |
| B1 | 8.90 | 9.50 | |
| C | 4.30 | 4.80 | |
| C1 | 2.30 | 3.10 | |
| D | 1.20 | 1.40 | |
| E | 0.70 | 0.90 | |
| F | 0.30 | 0.60 | |
| G | 1.17 | 1.37 | |
| H | 2.70 | 3.80 | |
| L | 12.60 | 14.80 | |
| N | 2.34 | 2.74 | |
| Q | 2.40 | 3.00 | |
| 3.50 | 3.90 |
Notes
- Exceeding the maximum ratings of the device in performance may cause damage to the device, even permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing.
- When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink.
- MOSFETs are sensitive to static electricity; it is necessary to protect the device from being damaged by static electricity when using it.
- Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change without prior notice.
Contact Information
402622B-22C
518025
0755-83273777
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