85V N Channel Power MOSFET Minos MPT120N08 Enhanced Double Trench Technology Ideal for Motor Drivers
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Delivery Time:
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Product Description
Product Overview
The MPT120N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching.
Product Attributes
- Brand: MNS-KX (derived from www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Product Code | MPT120N08P | ||
| Package | TO-220 | ||
| VDS (Drain-Source Voltage) | 85 | V | |
| RDS(on) (On-Resistance) | m | VGS=10V, ID=120A (Typ: 4.4m) | |
| ID (Continuous Drain Current) | 120 | A | Silicon Limited |
| ID (Continuous Drain Current) | 120 | A | Package Limited |
| ID (Continuous Drain Current @TC=100C) | 87.4 | A | Silicon Limited |
| IDM (Pulsed Drain Current) | 480 | A | Note1 |
| VGS (Gate-Source Voltage) | 20 | V | |
| EAS (Avalanche Energy) | 156 | mJ | Note2 |
| PD (Power Dissipation) | 173.6 | W | |
| Derating Factor above 25C | 1.39 | W/ | |
| TJ, Tstg (Operating Junction and Storage Temperature Range) | -55 to 150 | ||
| TL (Maximum Temperature for Soldering) | 260 | ||
| RJC (Thermal Resistance, Junction-Case) | 0.55 | /W | Max |
| RJA (Thermal Resistance, Junction-Ambient) | 62.5 | /W | Max |
| VDS (Drain-Source Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Drain-Source Leakage Current) | 1 | A | VDS=100V, VGS=0V |
| IDSS (Drain-Source Leakage Current @TC=125C) | 100 | A | VDS=80V, VGS=0V |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V |
| RDS(on) (Drain-Source On-Resistance) | 4.4 | m | VGS=10V, ID=50A (Typ) |
| VGS(th) (Gate Threshold Voltage) | 2.0 to 4.0 | V | VDS=VGS, ID=250A (Min to Max) |
| Ciss (Input Capacitance) | 4021 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Coss (Output Capacitance) | 637 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Crss (Reverse Transfer Capacitance) | 17 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Qg (Total Gate Charge) | 80 | nC | VDD=40V, ID=50A, VGS=10V (Typ) |
| Qgs (Gate-Source Charge) | 23 | nC | VDD=40V, ID=50A, VGS=10V (Typ) |
| Qgd (Gate-Drain Charge) | 24 | nC | VDD=40V, ID=50A, VGS=10V (Typ) |
| td(on) (Turn-On Delay Time) | 22 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| tr (Rise Time) | 42 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| td(off) (Turn-Off Delay Time) | 48 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| tf (Fall Time) | 25 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| IS (Continuous Source Current) | 120 | A | |
| ISM (Maximum Pulsed Current) | 480 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V, IS=50A (Max) |
| Trr (Reverse Recovery Time) | 60 | ns | Is=20A, di/dt=100A/us (Typ) |
| Qrr (Reverse Recovery Charge) | 136 | uC | Is=20A, di/dt=100A/us (Typ) |
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