Fast Switching Silicon N channel MOSFET Minos MD100N20 with 200V Drain to Source Voltage and Low RDS
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Description
The MD100N20 is a silicon N-channel Enhanced MOSFET, developed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal transistor for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.
General Features
- VDS=200V, ID=100A
- RDS(ON) < 28m @ VGS=10V
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Application
- High frequency switching mode power supply
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Origin: Shenzhen, China
- Material: Silicon N-channel Enhanced MOSFET
- Certifications: RoHS
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Voltage | 200 | V | |||
| ID | Continuous Drain Current @ TC=25C | 100 | A | |||
| ID | Continuous Drain Current @ TC=100C | 50 | A | |||
| IDM | Pulsed Drain Current (Note1) | 320 | A | |||
| VGS | Gate-to-Source Voltage | 30 | V | |||
| EAS | Single Pulse Avalanche Energy (Note2) | 2600 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 5.0 | V/ns | |||
| PD | Power Dissipation @ TO-3PN/TO-247 | 390 | W | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 150 | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 0.32 | /W | |||
| RJA | Junction-to-Ambient | 40 | /W | |||
| Electrical Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 200 | -- | -- | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA, Reference 25C | -- | 0.25 | -- | V/ |
| IDSS | Drain to Source Leakage Current | VDS =200V, VGS= 0V, Tj = 25 | -- | -- | 1 | A |
| IDSS | Drain to Source Leakage Current | VDS =160V, VGS= 0V, Tj =125 | -- | -- | 10 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | 100 | nA |
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=40A (Note4) | -- | 23 | 28 | m |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID=250A (Note4) | 2.0 | -- | 4.0 | V |
| gfs | Forward Transconductance | VDS=15V, ID=40A (Note4) | -- | 50 | -- | S |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | f = 1.0MHz | -- | 0.95 | -- | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHz | -- | 9650 | -- | PF |
| Coss | Output Capacitance | -- | 968 | -- | PF | |
| Crss | Reverse Transfer Capacitance | -- | 57 | -- | PF | |
| Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =100A, VDD = 100V, VGS = 10V, RG =20 | -- | 60 | -- | ns |
| tr | Rise Time | -- | 250 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 92 | -- | ns | |
| tf | Fall Time | -- | 118 | -- | ns | |
| Qg | Total Gate Charge | ID =100A, VDD =160V, VGS = 10V | -- | 152 | -- | nC |
| Qgs | Gate to Source Charge | -- | 56 | -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 39.5 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) @ TC=25 C | -- | -- | 100 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=100A, VGS=0V (Note4) | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | IS=100A, Tj = 25C, dIF/dt=100A/us, VGS=0V | -- | 192 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 1853 | -- | nC | |
| Irrm | Reverse Recovery Current | -- | 19.3 | -- | A | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina