500V 20A N channel transistor MIRACLE POWER MPF20N50 suitable for power supply and PFC applications
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Product Description
Product Overview
The MPF20N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance switching applications. It features a 500V breakdown voltage, a continuous drain current of 20A, and a low on-resistance of 0.24 (typ.) at VGS = 10V. With fast switching characteristics and 100% avalanche tested, this MOSFET is suitable for adaptors, standby power supplies, switching power supplies, and PFC applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Channel Type: N-Channel
- Technology: Miracle Technology
- Package: TO-220F
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 500 | V | |||
| VGS (Gate-Source Voltage) | 30 | V | |||
| ID (Drain Current-Continuous, TC =25C) | 20 | A | |||
| ID (Drain Current-Continuous, TC =100C) | 12.5 | A | |||
| IDM (Drain Current-Pulsed) | b | 80 | A | ||
| PD (Maximum Power Dissipation @ TJ =25C) | 88 | W | |||
| EAS (Single Pulsed Avalanche Energy) | d | 980 | mJ | ||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| RJC (Thermal Resistance, Junction-Case) | Max. | 1.42 | C/W | ||
| RJA (Thermal Resistance Junction-Ambient) | Max. | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 500 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 500V, VGS = 0V | - | - | 1 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 10V, ID =10A | - | 0.24 | 0.30 | |
| Dynamic Characteristics | |||||
| Ciss (Input Capacitance) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 3059 | - | pF |
| Coss (Output Capacitance) | - | 291 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 16 | - | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 250V, ID =20A, VGS=10V | - | 35 | - | ns |
| tr (Turn-On Rise Time) | - | 64 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 83 | - | ns | |
| tf (Turn-Off Fall Time) | - | 44 | - | ns | |
| Qg (Total Gate Charge) | VDS = 400V, ID =20A, VGS = 10V | - | 54 | - | nC |
| Qgs (Gate-Source Charge) | - | 13.3 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 18.7 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| IS (Drain-Source Diode Forward Continuous Current) | VGS = 0V | - | - | 20 | A |
| ISM (Maximum Pulsed Current) | VGS = 0V | - | - | 80 | A |
| VSD (Drain-Source Diode Forward Voltage) | IS = 20A, VGS = 0V | - | 1.4 | - | V |
| Trr (Body Diode Reverse Recovery Time) | IS=20A,VGS=0V, di/dt=100A/us | - | 535 | - | ns |
| Qrr (Reverse Recovery Charge) | - | 6.4 | - | uC | |
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