N Channel Power MOSFET Miracle Power MPD05N50C With 500 Volt Breakdown Voltage and Low On Resistance
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Product Description
Product Overview
The MPD05N50C is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 3A, and a low on-resistance of 2.8 (typ.) at VGS = 10V. This MOSFET offers low Crss, fast switching speeds, and is 100% avalanche tested, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 500 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 3 | A | |||
| ID | Drain Current-Continuous, TC =100C | 1.9 | A | |||
| IDM | Drain Current-Pulsed | 12 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 50 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 80 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.5 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 100 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 500 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 500V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 3.5 | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =1.5A | - | 2.8 | 3.5 | |
| gfs | Forward Transconductance | VDS=15V, ID=1.5A | - | 2.4 | - | S |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 2.5 | - | |
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 340 | - | pF |
| Coss | Output Capacitance | - | 15 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 1.3 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250V, ID =3A, VGS=10V,Rg=10 | - | 10.3 | - | ns |
| tr | Turn-On Rise Time | - | 13.9 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 28.8 | - | ns | |
| tf | Turn-Off Fall Time | - | 9.3 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID =3A, VGS = 10V | - | 8.8 | - | nC |
| Qgs | Gate-Source Charge | - | 1.6 | - | nC | |
| Qgd | Gate-Drain Charge | - | 4.2 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 3 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 12 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 3A | - | 0.85 | 1.5 | V |
| Trr | Body Diode Reverse Recovery Time | IS=3A,VGS = 0V dIF/dt=100A/us | - | 183 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 570 | - | nC | |
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