High Voltage Power Transistor Minos MD24N50 with Enhanced Avalanche Energy and Low Conduction Losses
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Product Description
Product Overview
The MD24N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is an ideal choice for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Parameter | Rating | Units | Notes |
| VDS (Drain-to-Source Voltage) | 500 | V | |
| RDS(ON) (Drain-to-Source On-Resistance) | m | @VGS=10V, ID=24A (Typ:180m) | |
| ID (Continuous Drain Current) | 24 | A | @ Ta=25 |
| ID (Continuous Drain Current) | 15.8 | A | @ TC = 100 C |
| IDM (Pulsed Drain Current) | 100 | A | Note1 |
| VGS (Gate-to-Source Voltage) | 30 | V | |
| EAS (Single Pulse Avalanche Energy) | 1500 | mJ | Note2 |
| dv/dt (Peak Diode Recovery dv/dt) | 5.0 | V/ns | Note3 |
| PD (Power Dissipation - TO-3PN) | 320 | W | @ Ta=25 |
| PD (Power Dissipation - TO-3PF) | 62.5 | W | @ Ta=25 |
| TJ, Tstg (Operating Junction and Storage Temperature Range) | -55 to 150 | ||
| TL (Maximum Temperature for Soldering) | 300 | ||
| RJC (Junction-to-Case - TO-3PN) | 0.39 | /W | |
| RJA (Junction-to-Ambient - TO-3PN) | 62.5 | /W | |
| RJC (Junction-to-Case - TO-3PF) | 2.0 | /W | |
| RJA (Junction-to-Ambient - TO-3PF) | 62.5 | /W | |
| BVDSS (Drain to Source Breakdown Voltage) | 500 | V | VGS=0V, ID=250A |
| IDSS (Drain to Source Leakage Current) | A | VDS=500V, VGS= 0V, Tj = 25 | |
| IDSS (Drain to Source Leakage Current) | A | VDS=400V, VGS= 0V, Tj = 125 | |
| IGSS(F) (Gate to Source Forward Leakage) | nA | VGS=+30V | |
| IGSS(R) (Gate to Source Reverse Leakage) | >-100 | nA | VGS=-30V |
| RDS(ON) (Drain-to-Source On-Resistance) | 0.18 - 0.28 | VGS=10V, ID=10A (Note4) | |
| VGS(TH) (Gate Threshold Voltage) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A (Note4) |
| gfs (Forward Transconductance) | 12 | S | VDS=20V, ID =10A (Note4) |
| Rg (Gate Resistance) | 1.3 | f = 1.0MHz | |
| Ciss (Input Capacitance) | 3500 | PF | VGS = 0V, VDS= 25V, f = 1.0MHz |
| Coss (Output Capacitance) | 350 | PF | |
| Crss (Reverse Transfer Capacitance) | 25 | PF | |
| td(ON) (Turn-on Delay Time) | 38 | ns | ID =24A, VDD= 250V, VGS= 10V, RG =20 |
| tr (Rise Time) | 75 | ns | |
| td(OFF) (Turn-Off Delay Time) | 99 | ns | |
| tf (Fall Time) | 83 | ns | |
| Qg (Total Gate Charge) | 72 | nC | ID =24A, VDD=400V, VGS = 10V |
| Qgs (Gate to Source Charge) | 17 | nC | |
| Qgd (Gate to Drain Miller)Charge | 25 | nC | |
| IS (Continuous Source Current - Body Diode) | 24 | A | TC=25 C |
| ISM (Maximum Pulsed Current - Body Diode) | 100 | A | |
| VSD (Diode Forward Voltage) | 1.0 | V | IS=24A, VGS=0V(Note4) |
| Trr (Reverse Recovery Time) | 551 | ns | IS=24A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Qrr (Reverse Recovery Charge) | 7025 | nC | |
| Irrm (Reverse Recovery Current) | 25.5 | A |
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Sellina