Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
Verified Supplier
17 Years
Since 2009
Menu

N Channel Enhancement Mode MOSFET MIRACLE POWER MSE003L with High Current Rating and Low Gate Charge

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The MSE003L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 150V drain-source voltage and a continuous drain current of 263A at 25C, with a low on-resistance of 3.3m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteed 100% EAS. It is suitable for motor driving in power tools, e-vehicles, and robotics, current switching in DC/DC & AC/DC (SR) subsystems, and power management in telecom, industrial automation, and CE applications.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 263 A
ID Drain Current-Continuous (TC = 100C) 166 A
IDM Drain Current-Pulsed 1052 A
PD Maximum Power Dissipation (TC = 25C) 625 W
EAS Single Pulsed Avalanche Energy 1106 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.2 C/W
RJA Thermal Resistance, Junction to Ambient 42 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 150 - - V
IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 3.3 3.9 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 4.1 -
Ciss Input Capacitance VDS = 75V, VGS = 0V, f = 1.0MHz - 8622 - pF
Coss Output Capacitance - 722 - pF
Crss Reverse Transfer Capacitance - 26 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDS = 75V, VGS = 10V, RL = 3.75 RGEN = 3.0 - 32 - ns
tr Turn-On Rise Time - 60 - ns
td(off) Turn-Off Delay Time - 87 - ns
tf Turn-Off Fall Time - 48 - ns
Qg Total Gate Charge VDS = 75V, VGS = 0 to 10V, ID = 20A - 125 - nC
Qgs Gate-Source Charge - 46 - nC
Qgd Gate-Drain Charge - 32 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 263 A
ISM Maximum Pulsed Current - - 1052 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - 0.7 1.2 V
Trr Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s - 111 - ns
Qrr Body Diode Reverse Recovery Charge IF = 15A, dIF/dt = 100A/s - 428 - nC

Package Information

Package Type: TOLL-8L

Symbol Min. Typ. Max. Symbol Min. Typ. Max.
A 2.25 2.30 2.35 E 9.85 9.90 9.95
A1 1.75 1.80 1.85 E1 8.00 8.10 8.20
b 0.65 0.70 0.75 E2 0.65 0.70 0.75
b1 9.75 9.80 9.85 H 11.60 11.70 11.80
b2 0.70 0.75 0.80 H1 6.95 BSC
b3 1.15 1.20 1.25 H2 5.90 BSC
c 0.45 0.50 0.55 K 3.10 REF
D 10.35 10.40 10.45 L 1.55 1.65 1.75
D1 11.00 11.10 11.20 L1 0.65 0.70 0.75
D2 3.25 3.30 3.35 L2 0.50 0.60 0.70
D4 4.50 4.55 4.60 L3 0.40 0.50 0.60
e 1.20 BSC Q 7.95 REF
e1 1.225 BSC R 3.00 3.10 3.20

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

Request A Quote

Please check your email address.
Your message must be at least 20 characters.