Silicon N Channel Power MOSFET Minos MD70N10 Suitable for Switch Mode Power Supplies and PFC Circuits
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Product Description
Product Overview
The MD70N10 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications due to its fast switching, 100% avalanche testing, and improved dv/dt capability. Key applications include Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.
Product Attributes
- Brand: MINOS
- Origin: Shenzhen, China
- Material: Silicon N-Channel
- Package: TO-3PH
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | V |
| Continuous Drain Current | ID | TC = 25 C | 70 | A |
| Pulsed Drain Current | IDM | Figure 6 | A | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy | EAS | IAS= 30A, VDD= 50V, RG = 25 , Starting TJ= 25C | 1943 | mJ |
| Avalanche Current | IAR | 32 | A | |
| Repetitive Avalanche Energy | EAR | 36 | mJ | |
| Power Dissipation | PD | TC = 25C | 200 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to175 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | TO-3P | 0.75 | /W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-3P | 62 | /W |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ = 25C | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 125C | 100 | A |
| Gate-Source Leakage | IGSS | VGS = +20V,VDS=0V | 100 | nA |
| Gate-Source Leakage | IGSS | VGS=-20V, VDS=0V | -100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID= 250A | 2.0 - 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 28A | 17 - 21 | m |
| Forward Transconductance | gfs | VDS = 10V, ID = 28A | 85 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 2700 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 610 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 260 | pF |
| Total Gate Charge | Qg | VDD =50V, ID = 28A, VGS = 0 to 10V | 60 | nC |
| Gate-Source Charge | Qgs | VDD =50V, ID = 28A, VGS = 0 to 10V | 15 | nC |
| Gate-Drain Charge | Qg | VDD =50V, ID = 28A, VGS = 0 to 10V | 45 | nC |
| Turn-on Delay Time | td(on) | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 20 | ns |
| Turn-on Rise Time | tr | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 28 | ns |
| Turn-off Delay Time | td(off) | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 65 | ns |
| Turn-off Fall Time | tf | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 15 | ns |
| Continuous Body Diode Current | IS | TC = 25 C | 70 | A |
| Pulsed Diode Forward Current | ISM | 230 | A | |
| Body Diode Voltage | VSD | TJ = 25C, ISD = 28A, VGS = 0V | 1.5 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 28A, diF/dt =100A /s | 195 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IS = 28A, diF/dt =100A /s | 107 | C |
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