Power Management Solutions with MIRACLE POWER MU4005D N Channel MOSFET 40V 70A and Low On Resistance
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Delivery Time:
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Product Description
Product Overview
The MU4005D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 40V drain-source voltage, 70A continuous drain current, and a typical on-resistance (RDS(on)) of 4.5m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, benefiting from advanced trench technology and guaranteed 100% EAS. It is suitable for applications such as load switches, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(on) | VGS = 10V | 40V | 70A | 4.5m | ||
| Key Benefits | Excellent RDS(on) and Low Gate Charge, 100% EAS Guaranteed | |||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 40 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 70 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 44 | A | ||
| IDM | Drain Current-Pulsed | b | 280 | A | ||
| PD | Maximum Power Dissipation | TC = 25C | 60 | W | ||
| EAS | Single Pulsed Avalanche Energy | c | 169 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.1 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 34 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 30A | - | 4.5 | 5.9 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A | - | 6.6 | 8.6 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | TBD | - | |
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 3031 | - | pF |
| Coss | Output Capacitance | - | 213 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 179 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 11 | - | ns |
| tr | Turn-On Rise Time | - | 32 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 52 | - | ns | |
| tf | Turn-Off Fall Time | - | 13 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 30A | - | 59 | - | nC |
| Qgs | Gate-Source Charge | - | 12 | - | nC | |
| Qgd | Gate-Drain Charge | - | 12 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 70 | A |
| ISM | Maximum Pulsed Current | - | - | 280 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 13 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 7 | - | nC |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 25V, IAS = 26A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.
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