Power MOSFET Minos IRF640NS N Channel 200V 18A Low On Resistance Suitable for Switching Applications
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Product Description
Product Overview
The IRF640NS is a high-performance N-Channel Enhanced Power MOSFET utilizing advanced MOSFET technology. It offers reduced conduction losses, improved switching performance, and enhanced avalanche energy, making it suitable for high-frequency switching mode power supplies (SMPS) and general-purpose applications. Key features include a high drain-to-source voltage (VDS) of 200V, a continuous drain current (ID) of 18A, and a low on-resistance (RDS(ON)) of less than 180m at VGS=10V. It is 100% avalanche tested and features improved dv/dt capability and RoHS compliance.
Product Attributes
- Brand: MNS-KX (implied from URL)
- Product Code: IRF640NS
- Package: TO-263
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions | Min. | Typ. | Max. |
| Absolute Ratings | VDSS | 200 | V | ||||
| ID | 18 | A | TC=25C | ||||
| ID | 11 | A | TC=100C | ||||
| IDM | 72 | A | Pulsed | ||||
| VGS | 30 | V | |||||
| EAS | 580 | mJ | Single Pulse Avalanche Energy | ||||
| dv/dt | 5.0 | V/ns | Peak Diode Recovery | ||||
| Power Dissipation | PD | 130 | W | TO-220, TO-251,TO-252 | |||
| PD | 42 | W | TO-220F | ||||
| Temperature Range | TJ, Tstg | -55 to 150 | Operating Junction and Storage | ||||
| Thermal Characteristics (No FullPAK) | RJC | 0.84 | /W | Junction-to-Case | |||
| RJA | 62.5 | /W | Junction-to-Ambient | ||||
| Thermal Characteristics (FullPAK) | RJC | 3.0 | /W | Junction-to-Case | |||
| RJA | 62.5 | /W | Junction-to-Ambient | ||||
| OFF Characteristics | VDSS | 200 | V | VGS=0V, ID=250A | |||
| BVDSS/ TJ | 0.25 | V/ | ID=250uA, Reference25 | ||||
| IDSS | 1 | A | VDS =200V, VGS= 0V, Tj = 25 | 1 | |||
| IGSS(F) | 100 | nA | VGS =+30V | 100 | |||
| ON Characteristics | RDS(ON) | 0.18 | VGS=10V, ID=7.5A | 0.13 | |||
| VGS(TH) | 4.0 | V | VDS = VGS, ID = 250A | 2.0 | |||
| gfs | 12 | S | VDS=15V, ID =9A | ||||
| Dynamic Characteristics | Rg | 2 | f = 1.0MHz | ||||
| Ciss | 1320 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz | ||||
| Coss | 450 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz | ||||
| Crss | 130 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz | ||||
| Switching Characteristics | td(ON) | 15 | ns | ID = 18A, VDD = 100V, VGS = 10V, RG =20 | |||
| Tr | 52 | ns | ID = 18A, VDD = 100V, VGS = 10V, RG =20 | ||||
| td(OFF) | 46 | ns | ID = 18A, VDD = 100V, VGS = 10V, RG =20 | ||||
| tf | 37 | ns | ID = 18A, VDD = 100V, VGS = 10V, RG =20 | ||||
| Gate Charge | Qg | 23 | nC | ID =18A, VDD =160V, VGS = 10V | |||
| Qgs | 8 | nC | ID =18A, VDD =160V, VGS = 10V | ||||
| Qgd | 6 | nC | ID =18A, VDD =160V, VGS = 10V | ||||
| Source-Drain Diode | IS | 18 | A | Continuous Source Current (Body Diode), TC=25 C | |||
| ISM | 72 | A | Maximum Pulsed Current (Body Diode) | ||||
| VSD | 1.2 | V | Diode Forward Voltage, IS=18A, VGS=0V | ||||
| Reverse Recovery | Trr | 350 | ns | IS=18A, Tj = 25C, dIF/dt=100A/us, VGS=0V | |||
| Qrr | 3600 | nC | IS=18A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
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