Power Management MOSFET MIRACLE POWER MU3013Y Featuring Electrical Avalanche Stress Tested Technology
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Product Description
Product Overview
The MU3013Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Featuring advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management. This MOSFET is guaranteed 100% EAS (Electrical Avalanche Stress) tested, ensuring reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 30 | V |
| VGS | Gate-Source Voltage | Tc = 25C unless otherwise noted | - | - | ±20 | V |
| ID | Drain Current-Continuous | TC = 25C | - | - | 90 | A |
| ID | Drain Current-Continuous | TC = 100C | - | - | 57 | A |
| IDM | Drain Current-Pulsed | b | - | - | 360 | A |
| PD | Maximum Power Dissipation | - | - | 236 | W | |
| EAS | Single Pulsed Avalanche Energy | c | - | - | 225 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | 0.53 | - | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 34 | - | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1.0 | µA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 30A d | - | 2.4 | 3.1 | mΩ |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A d | - | 3.6 | 4.6 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 3650 | - | pF |
| Coss | Output Capacitance | - | 494 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 366 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3Ω | - | 10 | - | ns |
| tr | Turn-On Rise Time | - | 19 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 50 | - | ns | |
| tf | Turn-Off Fall Time | - | 20 | - | ns | |
| Qg | Total Gate Charge | VDS = 15V, VGS = 0 to 10V, ID = 30A | - | 67 | - | nC |
| Qgs | Gate-Source Charge | - | 11 | - | nC | |
| Qgd | Gate-Drain Charge | - | 19 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 90 | A |
| ISM | Maximum Pulsed Current | - | - | 360 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, di/dt = 100A/µs | - | 18 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, di/dt = 100A/µs | - | 6 | - | nC |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 25V, IAS = 30A, RG = 25 Starting TJ = 25 .
d. Pulse width ≤300µs; duty cycle ≤2%.
Package Information: PDFN5*6
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