High Current Switching Device Minos MPT03N08W N channel MOSFET with Enhanced Double Trench Technology
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MOQ:
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Delivery Time:
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Product Description
Product Description
The MPT03N08W is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS-KX
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions |
| Product Code | MPT03N08-W | ||
| Package | TO-247 | ||
| VDS | 85 | V | |
| RDS(on) | m | VGS=10V, ID=180A (Typ: 2.3m) | |
| ID (Continuous, Package Limited) | 180 | A | |
| IDM (Pulsed Drain Current) | 720 | A | Note1 |
| VGS | 20 | V | |
| EAS (Avalanche Energy) | 900 | mJ | Note2 |
| PD (Power Dissipation) | 357 | W | |
| RJC (Thermal Resistance, Junction-Case) | 0.35 | /W | |
| RJA (Thermal Resistance, Junction-Ambient) | 62.5 | /W | |
| VDSs (Drain-Source Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Drain-Source Leakage Current) | 1 | A | VDS=85V, VGS=0V |
| IDSS (@TC=125C) | 100 | A | VDS=68V, VGS=0V |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V |
| RDS(on) (Drain-Source On-Resistance) | 3 | m | VGS=10V, ID=50A |
| VGS(th) (Gate Threshold Voltage) | 4.0 | V | VDS=VGS, ID=250A |
| Ciss (Input Capacitance) | 8237 | pF | VDS=42.5V, VGS=0V, f=1MHz |
| Coss (Output Capacitance) | 1549 | pF | |
| Crss (Reverse Transfer Capacitance) | 152 | pF | |
| Qg (Total Gate Charge) | 138.3 | nC | VDD=42.5V, ID=50A, VGS=10V |
| Qgs (Gate-Source Charge) | 39.5 | nC | |
| Qgd (Gate-Drain Charge) | 36.8 | nC | |
| td(on) (Turn-On Delay Time) | 32 | ns | VDD=42.5V, VGS=10V, RG=3, Resistive Load |
| tr (Rise Time) | 115 | ns | |
| td(off) (Turn-Off Delay Time) | 93 | ns | |
| tf (Fall Time) | 140 | ns | |
| IS (Continuous Source Current) | 180 | A | |
| ISM (Maximum Pulsed Current) | 720 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V, IS=50A |
| trr (Reverse Recovery Time) | 80 | ns | IS=50A, VGS=0V, di/dt=100A/us |
| Qrr (Reverse Recovery Charge) | 136 | uC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina