N Channel Enhancement Mode MOSFET MIRACLE POWER MSJ001C Suitable for Power Management and Automation
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Product Description
Product Overview
The MSJ001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 200V drain-source voltage, 109A continuous drain current, and a low on-resistance of 8.6m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, current switching in DC/DC and AC/DC (SR) sub-systems, and power management in telecom, industrial automation, and CE equipment. It is halogen-free, RoHS compliant, and 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen free; RoHS compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(on) | VGS = 10V | - | 8.6 | m | ||
| VDS | Drain-Source Voltage | - | - | 200 | V | |
| ID | Drain Current-Continuous (TC = 25C) | - | - | 109 | A | |
| ID | Drain Current-Continuous (TC = 100C) | - | - | 69 | A | |
| IDM | Drain Current-Pulsed | - | - | 436 | A | |
| PD | Maximum Power Dissipation (TC = 25C) | - | - | 312 | W | |
| EAS | Single Pulsed Avalanche Energy | - | - | 1225 | mJ | |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | 0.4 | - | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 63 | - | C/W | |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 200 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 200V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.5 | 3.3 | 4.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 8.6 | 10 | m |
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 7.0 | - | |
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 8788 | - | pF |
| Coss | Output Capacitance | - | 455 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 17 | - | pF | |
| td(on) | Turn-On Delay Time | VDS = 100V, VGS = 10V, RL = 5.0, RG = 6.0 | - | 30 | - | ns |
| tr | Turn-On Rise Time | - | 58 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 98 | - | ns | |
| tf | Turn-Off Fall Time | - | 43 | - | ns | |
| Qg | Total Gate Charge | VDS = 100V, VGS = 0 to 10V, ID = 20A | - | 122 | - | nC |
| Qgs | Gate-Source Charge | - | 43 | - | nC | |
| Qgd | Gate-Drain Charge | - | 23 | - | nC | |
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 109 | A |
| ISM | Maximum Pulsed Current | - | - | 436 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | 0.8 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 186 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 743 | - | nC |
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