N Channel MOSFET Minos MPF8N65 Offering 650V VDS and 8A Continuous Drain Current for Power Applications

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Product Description

Product Overview

This N-Channel MOSFET is designed for high-voltage applications, offering a VDS of 650V and a continuous drain current of 8A. It features fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for demanding power supply applications. The device is RoHS and Halogen-Free compliant.

Product Attributes

Brand: MNS
Origin: Shenzhen Minos (China)
Certifications: RoHS, Halogen-Free

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VDS	Drain-Source Voltage	TC=25unless otherwise specified	-	-	650	V
VGSS	Gate-Source Voltage	TC=25unless otherwise specified	-	-	30	V
ID	Continuous Drain Current	TC = 25, note5	-	-	8	A
IDM	Pulsed Drain Current	note3	-	-	32	A
PD	Power Dissipation	TC= 25, note2	-	-	35	W
EAS	Single Pulse Avalanche Energy	note3,6	-	-	281	mJ
RJC	Thermal Resistance, Junction to Case	-	-	-	3.6	/W
RJA	Thermal Resistance, Junction to Ambient	note1,4	-	-	62.5	/W
TJ, TSTG	Operating and Storage Temperature Range	-	-55	-	+150
Electrical Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	650	-	-	V
IDSS	Drain-Source Leakage Current	VDS = 650V, VGS = 0V	-	-	1	A
IGSS	Gate to Body Leakage Current	VDS= 0V, VGS = 30V	-	-	100	nA
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	2	-	4	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID= 4A	-	1.17	1.4
Ciss	Input Capacitance	VDS= 25V, VGS= 0V, f = 1.0MHz	-	870	-	pF
Coss	Output Capacitance	-	-	97	-	pF
Crss	Reverse Transfer Capacitance	-	-	9.6	-	pF
Qg	Total Gate Charge	VDS= 520V, ID = 8A, VGS= 10V	-	22	-	nC
Qgs	Gate-Source Charge	-	-	5	-	-
Qgd	Gate-Drain(Miller) Charge	-	-	5.5	-	-
td(on)	Turn-On Delay Time	VDS= 100V, ID= 8A, RG= 25, VGS=10V	-	12	-	ns
tr	Turn-On Rise Time	-	-	20	-	-
td(off)	Turn-Off Delay Time	-	-	74	-	-
tf	Turn-Off Fall Time	-	-	33	-	-
VDS	Diode Forward Voltage	IS=8A . VGS= 0V, note3	-	-	1.4	V
trr	Reverse Recovery Time	ISD=8A, VGS = 0V dlSD/dt=100A/s, note3	-	506	-	ns
Qrr	Reverse Recovery Charge	-	-	2.7	-	nC