Robust N Channel Power MOSFET MIRACLE POWER MJF25N60 with Low On Resistance and High Voltage Rating
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Product Description
Product Overview
The MJF25N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is rated at 600V and 25A with a typical on-resistance of 139m at VGS = 10V. This device is 100% avalanche tested and is suitable for various power applications including PC power, adaptors, server and telecom power supplies, LCD & PDP TVs, LED lighting, and UPS systems. It is also applicable in Boost PFC switch, single-ended flyback, two-transistor forward, HB, AHB, or LLC topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Super Junction Technology
- Type: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC = 25C | - | - | 600 | V |
| VGS | Gate-Source Voltage | - | - | 30 | V | |
| ID | Drain Current-Continuous | TC = 25C | - | - | 25 | A |
| IDM | Drain Current-Pulsed | - | - | 75 | A | |
| PD | Maximum Power Dissipation | TC = 25C | - | - | 34 | W |
| dv/dt | Peak Diode Recovery dv/dt | - | - | 15 | V/ns | |
| EAS | Single Pulsed Avalanche Energy | - | - | 781 | mJ | |
| TJ, TSTG | Operating and Store Temperature Range | - | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | 3.67 | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 80 | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 605 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 12.5A | - | 139 | 170 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 5.5 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 1760 | - | pF |
| Coss | Output Capacitance | - | - | 176 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 3.79 | - | pF |
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 | - | 8.4 | - | ns |
| tr | Turn-On Rise Time | - | - | 3.5 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 47.5 | - | ns |
| tf | Turn-Off Fall Time | - | - | 10.2 | - | ns |
| Qg | Total Gate Charge | VDD = 400V, VGS = 10V, ID = 11.3A | - | 37.7 | - | nC |
| Qgs | Gate-Source Charge | - | - | 8.91 | - | - |
| Qgd | Gate-Drain Charge | - | - | 13.52 | - | - |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.71 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 280.2 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 4.109 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 29.79 | - | A |
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