power switching component Minos IRF540NS-MNS N Channel Power MOSFET with 100V VDS and 35A ID rating
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Product Description
Product Overview
The IRF540NS-MNS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include a VDS of 100V, ID of 35A, and RDS(ON)
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos (China)
- Package: TO-263
- Certifications: Not specified in the provided text.
- Material: Not specified in the provided text.
- Color: Not specified in the provided text.
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Key Characteristics | ||||||
| Drain-Source Voltage | VDS | - | - | - | 100 | V |
| Drain Current (Continuous) | ID | - | - | - | 35 | A |
| RDS(ON) | RDS(ON) | VGS=10V, ID=12A | - | 25 | 30 | m |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25) | - | - | 100 | V |
| Gate-Source Voltage | VGS | (TA=25) | - | - | 20 | V |
| Drain Current-Continuous | ID | (TA=25) | - | - | 35 | A |
| Drain Current-Pulsed (Note 1) | IDM | (TA=25) | - | - | 100 | A |
| Maximum Power Dissipation(Tc=25) | PD | (TA=25) | - | - | 70 | W |
| Single pulse avalanche energy(Note 2) | EAS | (TA=25) | - | - | 96 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 175 | |
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | - | - | - | 3.5 | /W |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=12A (Note 3) | - | 25 | 30 | m |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 2550 | - | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | - | 225 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | - | 205 | - | pF |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V, RGEN=10 | - | 29 | - | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=20A, VGS=10V, RGEN=10 | - | 13 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, ID=20A, VGS=10V, RGEN=10 | - | 58.2 | - | nS |
| Turn-Off Fall Time | tf | VDD=50V, ID=20A, VGS=10V, RGEN=10 | - | 13.4 | - | nS |
| Total Gate Charge | Qg | VDS=80V,ID=20A, VGS=10V | - | 55 | - | nC |
| Gate-Source Charge | Qgs | VDS=80V,ID=20A, VGS=10V | - | 15 | - | nC |
| Gate-Drain Charge | Qg | VDS=80V,ID=20A, VGS=10V | - | 20 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25IF=10A di/dt=100A/uS note3 | - | 58 | - | nS |
| Reverse Recovery Charge | Qrr | Tj=25IF=10A di/dt=100A/uS note3 | - | 110 | - | nC |
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