Power MOSFET Minos MD23N50 with 5V per Nanosecond Peak Diode Recovery dv dt and 1200mJ Avalanche Energy
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Product Description
Product Description
The MD23N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. This technology reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
| General Features | ||||
| VDS | Drain-to-Source Voltage | 500 | V | |
| RDS(ON) | On-Resistance | VGS=10V, ID=23A | <260 | m |
| ID | Continuous Drain Current | TC = 100 C | 12.6 | A |
| IDM | Pulsed Drain Current | (Note1) | 80 | A |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAS | Single Pulse Avalanche Energy | (Note2) | 1200 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | (Note3) | 5.0 | V/ns |
| PD | Power Dissipation (TO-220, TO-3PN) | @ Ta=25 | 230 | W |
| PD | Power Dissipation (TO-220F, TO-3PF) | @ Ta=25 | 48 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | TO-3P | 300 | |
| Thermal Characteristics (No FullPAK) | ||||
| RJC | Junction-to-Case | 0.54 | /W | |
| RJA | Junction-to-Ambient | 62.5 | /W | |
| Thermal Characteristics (FullPAK) | ||||
| RJC | Junction-to-Case | 2.6 | /W | |
| RJA | Junction-to-Ambient | 62.5 | /W | |
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 500 | V |
| BVDSS/ TJ | Bvdss Temperature Coefficient | ID=250uA, Reference25 | 0.6 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=500V, VGS= 0V, Tj = 25 | 10 | A |
| IDSS | Drain to Source Leakage Current | VDS=400V, VGS= 0V, Tj = 125 | 100 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V, ID=10A(Note4) | 0.26 | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A(Note4) | 2.0 - 4.0 | V |
| gfs | Forward Transconductance | VDS=20V, ID=10A(Note4) | 12 | S |
| Dynamic Characteristics | ||||
| Rg | Gate resistance | f = 1.0MHz | 1.5 | |
| Ciss | Input Capacitance | VGS= 0V, VDS= 25V, f = 1.0MHz | 1920 | PF |
| Coss | Output Capacitance | 290 | PF | |
| Crss | Reverse Transfer Capacitance | 18 | pF | |
| Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID =23A, VDD= 250V, VGS= 10V, RG =20 | 33 | ns |
| tr | Rise Time | 75 | ns | |
| td(OFF) | Turn-Off Delay Time | 91 | ns | |
| tf | Fall Time | 83 | ns | |
| Qg | Total Gate Charge | ID=23A, VDD=400V, VGS = 10V | 56 | nC |
| Qgs | Gate to Source Charge | 13 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 20 | nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | TC=25 C | 23 | A |
| ISM | Maximum Pulsed Current (Body Diode) | 80 | A | |
| VSD | Diode Forward Voltage | IS=23A, VGS=0V(Note4) | 1.2 | V |
| Trr | Reverse Recovery Time | IS=23A, Tj = 25C, dIF/dt=100A/us, VGS=0V | 536 | ns |
| Qrr | Reverse Recovery Charge | 5668 | nC | |
| Irrm | Reverse Recovery Current | 21.1 | A | |
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