N Channel Power MOSFET 700V 8A Rating MIRACLE POWER MJD08N70 Suitable for Flyback and Forward Topologies
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Product Description
Product Overview
MJD08N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and suitable for applications such as PD Adaptors, LED lighting, LCD & PDP TVs, and single-ended flyback or two-transistor forward topologies.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Series: MJD08N70
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage, Current, Rds(on) | VGS = 10V | - | 0.54 | - | |
| Voltage | - | - | - | 700 | V |
| Current | TC = 25C | - | - | 8 | A |
| Avalanche Tested | - | 100% | - | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C | - | - | 700 | V |
| Gate-Source Voltage (VGS) | Tc = 25C | - | - | ±30 | V |
| Drain Current-Continuous (ID) | TC =25C | - | - | 8 | A |
| Drain Current-Pulsed (IDM) | b | - | - | 24 | A |
| Maximum Power Dissipation (PD) | @ TJ =25C | - | - | 78 | W |
| Peak Diode Recovery dv/dt (dv/dt) | c | - | - | 15 | V/ns |
| Single Pulsed Avalanche Energy (EAS) | d | - | - | 180 | mJ |
| Operating and Store Temperature Range (TJ, TSTG) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | - | - | 1.6 | - | C/W |
| Thermal Resistance, Junction to Ambient (RJA) | - | - | 62 | - | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 700 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 700V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| Static Drain-Source On-Resistance (RDS(on)) | c VGS = 10V, ID = 3.0 A | - | 0.54 | 0.60 | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | f = 1.0MHz | - | 24 | - | |
| Input Capacitance (Ciss) | VDS = 50V, VGS = 0V, f = 10kHz | - | 599 | - | pF |
| Output Capacitance (Coss) | - | - | 76 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 3.55 | - | pF |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 400V, VGS = 13V, ID = 3A, RG= 6.8 | - | 26.8 | - | ns |
| Turn-On Rise Time (tr) | - | - | 24.8 | - | ns |
| Turn-Off Delay Time (td(off)) | - | - | 127.6 | - | ns |
| Turn-Off Fall Time (tf) | - | - | 21.2 | - | ns |
| Gate-Source Charge (Qgs) | VDD = 400V, VGS = 0 to 10V, ID = 3A | - | 2.6 | - | nC |
| Gate-Drain Charge (Qg) | - | - | 1.7 | - | nC |
| Total Gate Charge (Qg) | - | - | 8 | - | nC |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 8 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 24 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IF = 1A | - | 0.76 | - | V |
| Body Diode Reverse Recovery Time (Trr) | VR = 400V, IF = 3A, dIF/dt = 100A/s | - | 174 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | VR = 400V, IF = 3A, dIF/dt = 100A/s | - | 1.2 | - | C |
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 10mH, VDD = 50V, IAS = 6A, RG = 25 Starting TJ = 25 .
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