Power MOSFET MIRACLE POWER MJD11N65 designed for in lighting telecom and server power applications
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Product Description
Product Overview
MJD11N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient power management. It offers a 650V breakdown voltage and a low on-resistance of 0.32 (typ.) at 10V VGS, making it easy to control gate switching. This enhancement mode MOSFET is suitable for various power applications including resonant and hard switching PWM, PFC stages, PC power supplies, adaptors, LCD & PDP TVs, lighting, server power, telecom power, and UPS systems.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Mode: Enhancement Mode
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 650V, 11A, | 0.32@VGS = 10V | ||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | 4.2 | V | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC =25C | 11 | A | ||
| IDM | Drain Current-Pulsed | b | 33 | A | ||
| PD | Maximum Power Dissipation | @ TJ =25C | 83 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | c | 15 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 624 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.5 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 5.5A | - | 0.32 | 0.35 | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 11 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 901 | - | pF |
| Coss | Output Capacitance | - | 59 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.3 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID =4.8A, VGS=13V, RG=3.4 | - | 7.2 | - | ns |
| tr | Turn-On Rise Time | - | 20.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 29.2 | - | ns | |
| tf | Turn-Off Fall Time | - | 19.2 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID =4.8A, VGS = 0 to10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | - | 5.8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 17 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.74 | - | V |
| Trr | Body Diode Reverse Recovery Time | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 250 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 2.57 | - | C |
| Irrm | Peak reverse recovery current | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 19.6 | - | A |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina