252 Packaged N Channel Power MOSFET Minos MDT30N10L with 30 Ampere Current and 100 Volt Drain Source
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Delivery Time:
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Product Description
Product Overview
The MDT30N10L is an N-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. This high-density cell design ensures ultra-low Rdson and is fully characterized for avalanche voltage and current, providing good stability and uniformity with high EAS. Its excellent package design facilitates efficient heat dissipation, making it suitable for a wide range of applications.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Ordering Code | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | EAS (mJ) | PD (W) | RJC (/W) |
|---|---|---|---|---|---|---|---|
| MPG30N10L | TO-263 | 100 | 30 | 96 | 70 | 3.5 | |
| MDT30N10L | TO-252 | 100 | 30 | 96 | 70 | 3.5 |
Electrical Characteristics
| Symbol | Parameter | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V, VGS=0V | -- | -- | 1 | A |
| IGSS | Gate-Body Leakage Current | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.0 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=12A | -- | 23 | 30 | m |
| GFS | Forward Transconductance | VDS=5V, ID=15A | -- | 11 | -- | S |
| Dynamic Characteristics | ||||||
| Clss | Input Capacitance | VDS=25V, VGS=0V, F=1.0MHz | -- | 2550 | -- | pF |
| Coss | Output Capacitance | -- | -- | 225 | -- | pF |
| Crss | Reverse Transfer Capacitance | -- | -- | 205 | -- | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=50V, ID=20A, VGS=10V, RGEN=10 | -- | 29 | -- | nS |
| tr | Turn-on Rise Time | -- | -- | 13 | -- | nS |
| td(off) | Turn-Off Delay Time | -- | -- | 58.2 | -- | nS |
| tf | Turn-Off Fall Time | -- | -- | 13.4 | -- | nS |
| Qg | Total Gate Charge | VDS=80V, ID=20A, VGS=10V | -- | 55 | -- | nC |
| Qgs | Gate-Source Charge | -- | -- | 15 | -- | nC |
| Qgd | Gate-Drain Charge | -- | -- | 20 | -- | nC |
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS=0V, IS=20A | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | Tj=25, IF=10A, di/dt=100A/uS | -- | 58 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | -- | 110 | -- | nC |
Applications
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
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