Power MOSFET N Channel 1500V Voltage 3A Current MIRACLE POWER MPF03NA5 for Power Switching Circuits
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Product Description
Product Overview
The MPF03NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers a high voltage rating of 1500V and a continuous drain current of 3A. Key features include low ON resistance (RDS(ON)(Typ.) = 5@VGS = 10V), fast switching, and low gate charge, making it ideal for power switching circuits in adaptors and chargers. It has undergone 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Limit | Unit |
|---|---|---|---|---|
| Features | ||||
| Voltage, Current, RDS(ON) | @VGS = 10V | 1500V, 3A, 5 (Typ.) | ||
| Avalanche Energy Test | Single Pulse | 100% Tested | ||
| Absolute Maximum Ratings | ||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 1500 | V |
| VGS | Gate-Source Voltage | 30 | V | |
| ID | Drain Current-Continuous | TC =25C | 3 | A |
| ID | Drain Current-Continuous | TC =100C | 1.8 | A |
| IDM | Drain Current-Pulsed | b | 12 | A |
| PD | Maximum Power Dissipation | @ TJ =25C | 32 | W |
| EAS | Single Pulsed Avalanche Energy | d | 245 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | C | |
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-Case | Max. | 3.8 | C/W |
| RJA | Thermal Resistance Junction-Ambient | Max. | 62.5 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||
| Off Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 1500 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1500V, VGS = 0V | - | 25 A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | 100 nA |
| On Characteristics | ||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 3 | 5 V |
| RDS(on) | Static Drain-Source On- Resistance | c, VGS = 10V, ID =1.5A | - | 5.0 - 6.5 |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2036 pF |
| Coss | Output Capacitance | - | 98 pF | |
| Crss | Reverse Transfer Capacitance | - | 12.8 pF | |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | VDD = 750V, ID =3A, RG = 10 | - | 35.8 ns |
| tr | Turn-On Rise Time | - | 19.4 ns | |
| td(off) | Turn-Off Delay Time | - | 56 ns | |
| tf | Turn-Off Fall Time | - | 31.2 ns | |
| Qg | Total Gate Charge | VDD = 750V, ID =3A, VGS = 10V | - | 37.6 nC |
| Qgs | Gate-Source Charge | - | 9.9 nC | |
| Qgd | Gate-Drain Charge | - | 14.4 nC | |
| Drain-Source Diode Characteristics | ||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | 3 A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | 12 A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 3A | - | 1.5 V |
| trr | Reverse Recovery Time | IS=3A,Tj = 25, dIF/dt=100A/us, VGS=0V | - | 882 ns |
| Qrr | Reverse Recovery Charge | - | 6.5 C | |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width300us; duty cycle2%
d. L=10mH, VDD=50V,Ias=7A,RG=25 Starting TJ=25
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