Power MOSFET Minos MP50N06 Featuring Low On Resistance and 60V Drain to Source Voltage for Switching
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Product Description
Product Overview
The MP50N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) and is suitable for a wide range of power switching and load switch applications. Key features include a VDS of 60V, ID of 50A, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-220
- Marking: MP50N06
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDSS | Drain-to-Source Breakdown Voltage | 60 | 66 | V | ||
| ID | Drain Current (continuous) | Tc=25 | 50 | A | ||
| IDM | Drain Current (pulsed) | 200 | A | |||
| VGS | Gate to Source Voltage | +/-20 | V | |||
| Ptot | Total Dissipation | Tc=25 | 100 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| Eas | Single Pulse Avalanche Energy | 256 | mj | |||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V, ID=25A | 11.0 | 14 | m | |
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=4.5V, ID=15A | 12.5 | 16 | m | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.9 | 2.5 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS= 0V | 1.0 | A | ||
| IGSS(F) | Gated Body Leakage Current | VGS= +20V | 100 | nA | ||
| IGSS(R) | Gated Body Leakage Current | VGS= -20V | -100 | nA | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | 2200 | pF | ||
| Coss | Output Capacitance | 225 | pF | |||
| Crss | Reverse Transfer Capacitance | 165 | pF | |||
| Qg | Total Gate Charge | VDS=25V ID=10A VGS=10V | 58 | nC | ||
| Qgs | Gate-Source Charge | 6 | nC | |||
| Qgd | Gate-Drain Charge | 15 | nC | |||
| td(on) | Turn-on Delay Time | VDD=25V,ID=10A,RL=0.3 VGS=10V,RG=6.8 | 20 | nS | ||
| tr | Turn-on Rise Time | 90 | nS | |||
| td(off) | Turn-off Delay Time | 45 | nS | |||
| tf | Turn-off Fall Time | 90 | nS | |||
| ISD | S-D Current(Body Diode) | 50 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 200 | A | |||
| VSD | Diode Forward Voltage | VGS=0V, IDS=25A | 1.4 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=25A di/dt=100A/us | 102 | nS | ||
| Qrr | Reverse Recovery Charge | 50 | nC | |||
| RJC | Junction-to-Case | 1.3 | /W |
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