100V P Channel Power MOSFET Minos MDT15P10D with Low Gate Charge and High Energy Avalanche Stability
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Product Description
Product Description
The MDT15P10D is a 100V P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -100 | V | ||
| VGS | Gate-Source Voltage | 10 | V | |||
| ID | Drain Current-Continuous | -15 | A | |||
| IDM | Drain Current-Pulsed (Note 1) | -15 | A | |||
| PD | Maximum Power Dissipation(TA=25) | 72 | W | |||
| EAS | Single pulse avalanche energy(Note 2) | 80 | mJ | |||
| Thermal Characteristic | RJC | Thermal Resistance,Junction-to-Case | 2.12 | /W | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | |||
| Note 1 | Repetitive Rating: Pulse width limited by maximum junction temperature. | |||||
| Off Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | -100 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-100V,VGS=0V) | -1 | A | |||
| IGSS | Gate-Body Leakage Current (VGS=10V,VDS=0V) | 100 | nA | |||
| VGS(th) | Gate Threshold Voltage (VDS=VGS,ID=-250A) | -1.0 | -2.4 | V | ||
| On Characteristics | RDS(ON) | Drain-Source On-State Resistance (Note 3) (VGS=-10V, ID=-15A) | 90 | 100 | m | |
| RDS(ON) | Drain-Source On-State Resistance (Note 3) (VGS=-4.5V, ID=-15A) | 100 | 110 | m | ||
| Forward Transconductance | gFS | (VDS=-50V,ID=-15A) | 7.2 | S | ||
| Dynamic Characteristics | Clss | Input Capacitance (VDS=-50V,VGS=0V, f=1.0MHz) | 2360 | pF | ||
| Coss | Output Capacitance | 81 | pF | |||
| Crss | Reverse Transfer Capacitance | 67 | pF | |||
| Switching Characteristics (Note 4) | td(on) | Turn-on Delay Time (VDD=-50V, ID=-15A, VGS=-10V,RGEN=10) | 20 | nS | ||
| tr | Turn-on Rise Time | 11 | nS | |||
| td(off) | Turn-Off Delay Time | 100 | nS | |||
| tf | Turn-Off Fall Time | 38 | nS | |||
| Gate Charge | Qg | Total Gate Charge (VDS=-50V,ID=-16A, VGS=-10V) | 71 | nC | ||
| Qgs | Gate-Source Charge | 13 | nC | |||
| Qgd | Gate-Drain Charge | 13 | nC | |||
| Drain-Source Diode Characteristics | VSD | Diode Forward Voltage (VGS=0V,IS=-10A) | -1.2 | V | ||
| Note 2 | EAS condition :T j=25,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25 | |||||
| Note 3 | Pulse Test: Pulse Width 300s, Duty Cycle 2%.Guaranteed by design, not subject to production | |||||
| Note 4 | Test Circuit and Waveform |
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