High Current Capacity Minos IRF1404 Power MOSFET with 40V Drain Source Voltage and Low On Resistance

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The IRF1404 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of applications, including power switching and adapters/chargers. Key features include a VDS of 40V, ID of 180A, low ON resistance, and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: MNS-KX (implied from URL)
Origin: Shenzhen, China (implied from contact information)
Material: Silicon
Certifications: Not specified

Technical Specifications

Parameter	Value	Unit	Conditions
Absolute Maximum Ratings
VDS	40	V	Drain-to-Source Breakdown Voltage
ID	180	A	Drain Current (continuous) at Tc=25
IDM	640	A	Drain Current (pulsed)
VGS	+/-30	V	Gate to Source Voltage
Ptot	200	W	Total Dissipation at Tc=25
Tj Max.	175		Operating Junction Temperature
EAS	700	mJ	Single Pulse Avalanche Energy
Electrical Characteristics
VDS	40	V	VGS=0V, ID=250A
RDS(on)	2.5 - 3.5	m	VGS =10V, ID=50A
VGS(th)	2.0 - 3.2	V	VDS=VGS, ID=250 A
IDSS	1.0	A	VDS=40V, VGS = 0V
IGSS(F)	100	nA	VGS= +20V
IGSS(R)	-100	nA	VGS= -20V
Ciss	3315	pF	VGS =0V, VDS=25V, f=1.0MHZ
Coss	230	pF	VGS =0V, VDS=25V, f=1.0MHZ
Crss	18	pF	VGS =0V, VDS=25V, f=1.0MHZ
Switching Characteristics
td(on)	34	nS	VDD=20V,ID=50A, RG=10
tr	26	nS	VDD=20V,ID=50A, RG=10
td(off)	72	nS	VDD=20V,ID=50A, RG=10
tf	39	nS	VDD=20V,ID=50A, RG=10
Qg	47	nC	VDS=20 V ID=50A VGS=10V
Qgs	11.2	nC	VDS=20 V ID=50A VGS=10V
Qgd	19	nC	VDS=20 V ID=50A VGS=10V
Source-Drain Diode Characteristics
ISD	180	A	S-D Current(Body Diode)
ISDM	640	A	Pulsed S-D Current(Body Diode)
VSD	1.5	V	VGS=0V, IDS=100A
trr	555	nS	TJ=25,IF=100A di/dt=100A/us
Qrr	4550	C	TJ=25,IF=100A di/dt=100A/us
Thermal Characteristics
RJC	2.5	/W	Junction-to-Case