Power MOSFET MIRACLE POWER MJQ52N80F with 52A Drain Current and Advanced Super Junction Technology
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Product Description
Product Overview
The MJQ52N80F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology for efficient and reliable performance. This MOSFET offers a high voltage rating of 800V and a continuous drain current of 52A, with a low on-resistance of 80m (typ.) at VGS = 10V. It features easy-to-control gate switching and is 100% avalanche tested, making it suitable for demanding applications. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MJQ Series
- Technology: Advanced Super Junction Technology
- Channel Type: N-Channel
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC = 25C unless otherwise noted | - | - | 800 | V |
| VGS | Gate-Source Voltage | - | - | 30 | - | V |
| ID | Drain Current-Continuous | TC = 25C | - | - | 52 | A |
| ID | Drain Current-Continuous | TC = 100C | - | - | 35 | A |
| IDM | Drain Current-Pulsed | b | - | - | 141 | A |
| PD | Maximum Power Dissipation | TC = 25C | - | - | 417 | W |
| dv/dt | Peak Diode Recovery dv/dt | - | - | - | - | V/ns |
| EAS | Single Pulsed Avalanche Energy | c | - | - | 781 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | - | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | 0.3 | - | C/W |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 62 | - | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 800 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 800, VGS = 0V | - | - | 3 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 3.2 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 27A | - | 80 | 92 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 22 | - | |
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 3804 | - | pF |
| Coss | Output Capacitance | - | - | 136 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS = 100V, VGS = 0V, f = 300KHz | - | 1.1 | - | - |
| On Characteristics (Continued) | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 55A, RG = 3.4 | - | 72 | - | ns |
| tr | Turn-On Rise Time | - | - | 75 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 60 | - | ns |
| tf | Turn-Off Fall Time | - | - | 28.1 | - | - |
| Qg | Total Gate Charge | VDD = 480V, VGS = 0 to 10V, ID = 55A | - | 102 | - | nC |
| Qgs | Gate-Source Charge | - | - | 30.5 | - | - |
| Qgd | Gate-Drain Charge | - | - | 37.4 | - | - |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.65 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 55A, dIF/dt = 100A/s | - | 178 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 55A, dIF/dt = 100A/s | - | 1.81 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 55A, dIF/dt = 100A/s | - | 19 | - | A |
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