Power Management MOSFET MIRACLE POWER MS0001Y N Channel Enhancement Mode for DC DC Converter Systems

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Product Description

Product Overview

The MS0001Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications. It features excellent RDS(on) and low gate charge, making it suitable for DC/DC converters and power management systems. This device is halogen-free and RoHS-compliant, with a 100% EAS guaranteed rating.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Line: MOSFET
Channel Type: N-Channel
Mode: Enhancement Mode
Technology: Miracle Technology
Certifications: Halogen-free; RoHS-compliant

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Features
	Voltage/Current/Resistance
	100V, 109A, RDS(on)(Typ.) = 4.4m@VGS = 10V
	Excellent RDS(on) and Low Gate Charge
	100% EAS Guaranteed
Application
	High Frequency Switching and Synchronous
	DC/DC Converter
	Power Management
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS	Drain-Source Voltage				100	V
VGS	Gate-Source Voltage				20	V
ID	Drain Current-Continuous (TC = 25C)				109	A
ID	Drain Current-Continuous (TC = 100C)				69	A
IDM	Drain Current-Pulsed b				435	A
PD	Maximum Power Dissipation (TC = 25C)				125	W
EAS	Single Pulsed Avalanche Energy c				294	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			1.0		C/W
RJA	Thermal Resistance, Junction to Ambient			43		C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	100	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 100V, VGS = 0V	-	-	1.0	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.0	-	2.5	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID = 20A	-	4.4	5.7	m
RDS(on)	Static Drain-Source On-Resistance	VGS = 4.5V, ID = 15A	-	6.4	8.3	m
Dynamic Characteristics
RG	Gate Resistance	VDS = VGS = 0V, f = 1.0MHz	-	1.0	-
Ciss	Input Capacitance	VDS = 50V, VGS = 0V, f = 1.0MHz	-	2326	-	pF
Coss	Output Capacitance		-	1160	-	pF
Crss	Reverse Transfer Capacitance		-	23	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0	-	11	-	ns
tr	Turn-On Rise Time		-	20	-	ns
td(off)	Turn-Off Delay Time		-	30	-	ns
tf	Turn-Off Fall Time		-	8	-	ns
Qg	Total Gate Charge	VDS = 50V, VGS = 0 to 10V, ID = 20A	-	36	-	nC
Qgs	Gate-Source Charge		-	7.9	-	nC
Qgd	Gate-Drain Charge		-	7.4	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VG = VD = 0V, Force Current	-	-	109	A
ISM	Maximum Pulsed Current		-	-	435	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 30A	-	0.7	1.2	V
Trr	Body Diode Reverse Recovery Time	IF = 20A, dIF/dt = 100A/s	-	52	-	ns
Qrr	Body Diode Reverse Recovery Charge	IF = 20A, dIF/dt = 100A/s	-	66	-	nC