High Avalanche Ruggedness N Channel MOSFET Minos MPT053N10P Designed for Motor Drivers and Switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPT053N10 is an N-Channel Enhanced Power MOSFET designed for high-speed switching applications and motor drivers. It utilizes advanced double trench technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. Key features include low on-resistance, fast switching, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
| General Features | |||||
| VDS | 100 | V | |||
| Rds(on) | VGS=10V, ID=120A | 4.8 | 5.3 | m | |
| ID | Continuous Drain Current, Package Limited | 120 | A | ||
| Absolute Ratings | |||||
| VDSS | 100 | V | |||
| ID | Continuous Drain Current, Silicon Limited | 127 | A | ||
| ID | Continuous Drain Current, Package Limited | 120 | A | ||
| ID | Continuous Drain Current @TC=100C, Silicon Limited | 80.7 | A | ||
| IDM | Pulsed Drain Current (Note1) | 460 | A | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| EAS | Avalanche Energy (Note2) | 306 | mJ | ||
| PD | Power Dissipation | 173.6 | W | ||
| Derating Factor | above 25C | 1.39 | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 150 | ||
| TL | Maximum Temperature for Soldering | 260 | |||
| Thermal Characteristics | |||||
| RJC | thermal resistance, Junction-Case | 0.72 | /W | ||
| RJA | thermal resistance, Junction-Ambient | 62.5 | /W | ||
| OFF Characteristics | |||||
| VDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | 100 | -- | -- | V |
| IDSS | Drain-Source Leakage Current (VDS=100V, VGS=0V) | -- | 1 | A | |
| IDSS | Drain-Source Leakage Current (VDS=80V, VGS=0V @TC=125C) | -- | 100 | A | |
| IGSS(F) | Gate-Source Forward Leakage (VGS=+20V) | -- | 100 | nA | |
| IGSS(R) | Gate-Source Reverse Leakage (VGS=-20V) | -- | -100 | nA | |
| ON Characteristics | |||||
| RDS(on) | Drain-Source On-Resistance (VGS=10V, ID=50A) | 4.8 | 5.3 | m | |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=250A) | 2.0 | 3.0 | 4.0 | V |
| Dynamic Characteristics | |||||
| Ciss | Input Capacitance (VDS=50V, VGS=0, f=1MHz) | 5000 | -- | pF | |
| Coss | Output Capacitance | 878 | -- | pF | |
| Crss | Reverse Transfer Capacitance | 75 | -- | pF | |
| Qg | Total Gate Charge (VDD=50V, ID=50A, VGS=10V) | 74 | -- | nC | |
| Qgs | Gate-Source charge | 25 | -- | ||
| Qgd | Gate-Drain charge | 14 | -- | ||
| Switching Characteristics | |||||
| td(on) | Turn-On Delay Time (VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load) | 22 | -- | ns | |
| tr | Rise Time | 42 | -- | ns | |
| td(off) | Turn-Off Delay Time | 48 | -- | ns | |
| tf | Fall Time | 25 | -- | ns | |
| Source-Drain Diode Characteristics | |||||
| IS | Continuous Source Current | -- | 120 | A | |
| ISM | Maximum Pulsed Current | -- | 460 | A | |
| VSD | Diode Forward Voltage (VGS=0V, IS=50A) | -- | 1.2 | V | |
| Trr | Reverse Recovery Time (Is=50A, di/dt=100A/us) | 66 | -- | ns | |
| Qrr | Reverse Recovery Charge | 150 | -- | uC | |
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