Power MOSFET Minos MPT110N8F6 N Channel Enhanced with Low Conduction Losses and Fast Switching Speed
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPT110N8F6 is an N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and high-speed switching applications, offering low on-resistance, fast switching, low gate charge, and high avalanche ruggedness.
Product Attributes
- Brand: Shenzhen Minos (MNS-KX)
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions |
| General Features | |||
| VDS | 85 | V | |
| RDS(on) | <6.5 | m | VGS=10V, ID=118A (Typ:5.4m) |
| Absolute Ratings | |||
| VDSS | 85 | V | |
| ID (Silicon Limited) | 118 | A | TC=25C |
| ID (Package Limited) | 80 | A | TC=25C |
| ID @TC=100C (Silicon Limited) | 75 | A | |
| IDM (Pulsed Drain Current) | 320 | A | Note1 |
| VGS | 20 | V | |
| EAS (Avalanche Energy) | 100 | mJ | Note2 |
| PD (Power Dissipation) | 156.2 | W | |
| TJ, Tstg (Operating & Storage Temp.) | -55 to 150 | ||
| TL (Max Temp. for Soldering) | 260 | ||
| Thermal Characteristics | |||
| RJC (Junction-Case) | 0.55 | /W | |
| RJA (Junction-Ambient) | 62.5 | /W | |
| OFF Characteristics | |||
| VDSS (Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Leakage Current) | 1 | A | VDS=100V, VGS=0V |
| IDSS @TC=125C | 100 | A | VDS=80V, VGS=0V |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V |
| ON Characteristics | |||
| RDS(on) | 5.4 | m | VGS=10V, ID=50A (Typ) |
| RDS(on) | 6.5 | m | VGS=10V, ID=50A (Max) |
| VGS(th) (Gate Threshold Voltage) | 2.0 to 4.0 | V | VDS=VGS, ID=250A |
| Dynamic Characteristics | |||
| Ciss (Input Capacitance) | 3217 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Coss (Output Capacitance) | 510 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Crss (Reverse Transfer Capacitance) | 13.5 | pF | VDS=40V, VGS=0, f=1MHz (Typ) |
| Qg (Total Gate Charge) | 64 | nC | VDD=40V,ID=50A, VGS=10V (Typ) |
| Qgs (Gate-Source Charge) | 18.4 | nC | VDD=40V,ID=50A, VGS=10V (Typ) |
| Qgd (Gate-Drain Charge) | 19 | nC | VDD=40V,ID=50A, VGS=10V (Typ) |
| Switching Characteristics | |||
| td(on) (Turn-On Delay Time) | 17 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| tr (Rise Time) | 30 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| td(off) (Turn-Off Delay Time) | 37 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| tf (Fall Time) | 20 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load (Typ) |
| Source-Drain Diode Characteristics | |||
| IS (Continuous Source Current) | 118 | A | |
| ISM (Maximum Pulsed Current) | 320 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | IS=50A (Max) |
| Trr (Reverse Recovery Time) | 57 | ns | Is=20A, di/dt=100A/us (Typ) |
| Qrr (Reverse Recovery Charge) | 65 | uC | Is=20A, di/dt=100A/us (Typ) |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina