N Channel Enhancement Mode MOSFET MIRACLE POWER MU4003D with 40V Drain Source Voltage and 50A Current

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Product Description

Product Overview

The MU4003D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 50A continuous drain current, and a low on-resistance (RDS(on) Typ. = 8.0m@VGS = 10V). This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as load switches, PWM applications, and power management. The device is halogen-free and RoHS-compliant.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Enhancement Mode MOSFET
Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Parameter	Rating / Value	Unit
Features
Voltage	40	V
Current	50	A
RDS(on)(Typ.) @ VGS = 10V	8.0	m
EAS Guaranteed	100%
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
Drain-Source Voltage (VDS)	40	V
Gate-Source Voltage (VGS)	20	V
Drain Current-Continuous (TC = 25C) (ID)	50	A
Drain Current-Continuous (TC = 100C) (ID)	31	A
Drain Current-Pulsed (IDM)	200	A
Maximum Power Dissipation (PD, TC = 25C)	39	W
Single Pulsed Avalanche Energy (EAS)	76	mJ
Operating and Store Temperature Range (TJ, TSTG)	-55 to 150	C
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC)	3.2	C/W
Thermal Resistance, Junction to Ambient (RJA)	43	C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS) (VGS = 0V, ID = 250A)	40	V
Zero Gate Voltage Drain Current (IDSS) (VDS = 40V, VGS = 0V)	1.0	A
Forward Gate Body Leakage Current (IGSS) (VDS = 0V, VGS = 20V)	100	nA
On Characteristics
Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = 250A)	1.0 - 2.5	V
Static Drain-Source On-Resistance (RDS(on)) (VGS = 10V, ID = 30A)	8.0 - 10	m
Static Drain-Source On-Resistance (RDS(on)) (VGS = 4.5V, ID = 20A)	10.5 - 13	m
Dynamic Characteristics
Gate Resistance (RG) (VDS = VGS = 0V, f = 1.0MHz)	2.2
Input Capacitance (Ciss) (VDS = 20V, VGS = 0V, f = 1.0MHz)	1912	pF
Output Capacitance (Coss)	126	pF
Reverse Transfer Capacitance (Crss)	105	pF
Switching Characteristics
Turn-On Delay Time (td(on)) (VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0)	8.0	ns
Turn-On Rise Time (tr)	28	ns
Turn-Off Delay Time (td(off))	35	ns
Turn-Off Fall Time (tf)	7.0	ns
Total Gate Charge (Qg) (VDS = 20V, VGS = 0 to 10V, ID = 20A)	37	nC
Gate-Source Charge (Qgs)	8.0	nC
Gate-Drain Charge (Qgd)	7.0	nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS) (VG = VD = 0V, Force Current)	50	A
Maximum Pulsed Current (ISM)	200	A
Drain-Source Diode Forward Voltage (VSD) (VGS = 0V, IS = 30A)	1.2	V
Body Diode Reverse Recovery Time (Trr) (IF = 20A, dIF/dt = 100A/s)	10	ns
Body Diode Reverse Recovery Charge (Qrr) (IF = 20A, dIF/dt = 100A/s)	5.0	nC