Load Switch MOSFET MIRACLE POWER MU4006D with 80A Continuous Drain Current and 40V Maximum Drain Source Voltage
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Product Description
Product Overview
The MU4006D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring 40V drain-source voltage and 80A continuous drain current. It offers excellent RDS(on) of 4.5m (Typ.) at VGS = 10V and low gate charge, thanks to its advanced trench technology. This MOSFET is 100% EAS guaranteed and is suitable for applications such as load switches, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 80 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 50 | A | ||
| IDM | Drain Current-Pulsed | 320 | A | |||
| PD | Maximum Power Dissipation | TC = 25C | 142 | W | ||
| EAS | Single Pulsed Avalanche Energy | 175 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.88 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 31 | C/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 30A | - | 4.5 | 5.8 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 20A | - | 6.1 | 8.2 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | TBD | - | |
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 3778 | - | pF |
| Coss | Output Capacitance | - | 267 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 224 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 12 | - | ns |
| tr | Turn-On Rise Time | - | 29 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 60 | - | ns | |
| tf | Turn-Off Fall Time | - | 16 | - | ns | |
| Qg | Total Gate Charge | VDD = 20V, VGS = 0 to 10V, ID = 30A | - | 73 | - | nC |
| Qgs | Gate-Source Charge | - | 15 | - | nC | |
| Qgd | Gate-Drain Charge | - | 16 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 80 | A |
| ISM | Maximum Pulsed Current | - | - | 320 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 16 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 10 | - | nC |
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Contact Person
Sellina