Power MOSFET MIRACLE POWER MU3017Y with 30 Volt Drain Source Voltage and 5.3 Milliohm On Resistance
Product Overview
The MU3017Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This high-performance MOSFET offers a -30V drain-source voltage and -60A continuous drain current, with a low typical on-resistance of 5.3m at 10V gate-source voltage. It features low gate charge, 100% UIS tested, and 100% DVDS tested, ensuring high reliability and capability for handling power and current. Ideal for load switching, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: P-Channel Enhancement Mode MOSFET
- Model: MU3017Y
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Drain-Source Voltage | -30 | V | ||||
| Drain Current (Continuous) | TC = 25C | -60 | A | |||
| RDS(ON) (Typ.) | VGS = 10V | 5.3 | m | |||
| Low Gate Charge | ||||||
| 100% UIS Tested | ||||||
| 100% DVDS Tested | ||||||
| High Power and current handling capability | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | - | 20 | V | ||
| ID | Drain Current-Continuous | TC = 25C | -60 | A | ||
| ID | Drain Current-Continuous | TC = 100C | -39 | A | ||
| IDM | Drain Current-Pulsed | b | -240 | A | ||
| PD | Maximum Power Dissipation | TC = 25C | 41.6 | W | ||
| EAS | Single Pulsed Avalanche Energy | c | 400 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | C/W | ||||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V | - | - | -1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250A | -1.0 | -1.7 | -2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -10V, ID = -20A | - | 5.3 | 6.9 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -4.5V, ID = -20A | - | 7.2 | 9.6 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 8 | ||
| Ciss | Input Capacitance | VDS = -20V, VGS = 0V, f = 1.0MHz | - | 4994 | pF | |
| Coss | Output Capacitance | - | 410 | pF | ||
| Crss | Reverse Transfer Capacitance | - | 221 | pF | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = -30V, VGS = -10V, RL = 4, RGEN = 6 | - | 13 | ns | |
| tr | Turn-On Rise Time | - | 115 | ns | ||
| td(off) | Turn-Off Delay Time | - | 78 | ns | ||
| tf | Turn-Off Fall Time | - | 86 | ns | ||
| Qg | Total Gate Charge | VDS = -15V, VGS = -10V, ID = -20A | - | 40.9 | nC | |
| Qgs | Gate-Source Charge | - | 9.9 | - | ||
| Qgd | Gate-Drain Charge | - | 14.3 | - | ||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | -60 | A |
| ISM | Maximum Pulsed Current | - | - | -240 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = -10A | - | - | -1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = -10A, di/dt = -100A/s | - | 13 | ns | |
| Qrr | Body Diode Reverse Recovery Charge | IF = -10A, di/dt = -100A/s | - | 8 | nC | |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = -25V, IAS = -40A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.
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