Load Switching Solutions Using MIRACLE POWER MU3009D N Channel Enhancement Mode MOSFET with 50A Drain Current

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Product Description

Product Overview

The MU3009D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Featuring advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and power management. This MOSFET boasts a 30V drain-source voltage and a continuous drain current of 50A, with a typical RDS(ON) of 6.4m at VGS = 10V.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Technology: Advanced Trench Technology
Mode: N-Channel Enhancement Mode
Lead Free: Yes

Technical Specifications

Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDS)				30	V
Gate-Source Voltage (VGS)				20	V
Drain Current-Continuous (ID) @ TC = 25C				50	A
Drain Current-Continuous (ID) @ TC = 100C				31	A
Drain Current-Pulsed (IDM)				200	A
Maximum Power Dissipation (PD) @ TJ = 25C				96	W
Single Pulsed Avalanche Energy (EAS)				72	mJ
Operating and Store Temperature Range (TJ, TSTG)		-55		150	C
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC)			1.3		C/W
Thermal Resistance, Junction to Ambient (RJA)			32		C/W
Electrical Characteristics @ TJ = 25C
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS)	VGS = 0V, ID = 250A	30	-	-	V
Zero Gate Voltage Drain Current (IDSS)	VDS = 30V, VGS = 0V	-	-	1	A
Forward Gate Body Leakage Current (IGSS)	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
Gate Threshold Voltage (VGS(th))	VDS = VGS, ID = 250A	1.0	1.8	2.5	V
Static Drain-Source On-Resistance (RDS(on))	VGS = 10V, ID = 25A	-	6.4	8.0	m
Static Drain-Source On-Resistance (RDS(on))	VGS = 4.5V, ID = 15A	-	9.9	12.9	m
Dynamic Characteristics
Input Capacitance (Ciss)	VDS = 15V, VGS = 0V, f = 1MHz	-	1174	-	pF
Output Capacitance (Coss)		-	162	-	pF
Reverse Transfer Capacitance (Crss)		-	130	-	pF
Switching Characteristics
Turn-On Delay Time (td(on))	VDD = 15V, VGS = 10V, ID = 15A, RGEN = 3	-	7	-	ns
Turn-On Rise Time (tr)		-	15	-	ns
Turn-Off Delay Time (td(off))		-	25	-	ns
Turn-Off Fall Time (tf)		-	6	-	ns
Total Gate Charge (Qg)	VDS = 15V, VGS = 0 to 10V, ID = 15A	-	23	-	nC
Gate-Source Charge (Qgs)		-	4.5	-	-
Gate-Drain Charge (Qgd)		-	5.5	-	-
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS)		-	-	50	A
Maximum Pulsed Current (ISM)		-	-	200	A
Drain-Source Diode Forward Voltage (VSD)	VGS = 0V, IS = 30A	-	-	1.2	V
Body Diode Reverse Recovery Time (Trr)	IF = 20A, di/dt = 100A/s	-	10	-	ns
Body Diode Reverse Recovery Charge (Qrr)	IF = 20A, di/dt = 100A/s	-	3	-	nC