Enhanced Power MOSFET Minos MPT052N10P Featuring Low Conduction Loss and High Avalanche Ruggedness

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Product Description

The MPT052N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal device for synchronous rectification and high-speed switching applications, offering low on-resistance, fast switching speeds, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. The product is RoHS compliant.

Product Attributes

Brand: MNS-KX (implied from www.mns-kx.com)
Origin: Shenzhen, China (implied from contact information)
Certifications: RoHS

Technical Specifications

Parameter	Value	Unit	Conditions
Key Characteristics
VDS	100	V
ID	120	A
Rds(on)		m	VGS=10V (Typ: 4.6m)
Absolute Ratings
VDSS	100	V
ID (Silicon Limited)	127	A	TC=25C
ID (Package Limited)	120	A	TC=25C
ID (TC=100C, Silicon Limited)	80.7	A
IDM (Pulsed Drain Current)	480	A	Note1
VGS	20	V
EAS (Avalanche Energy)	306	mJ	Note2
PD (Power Dissipation)	173.6	W
TJ, Tstg (Operating & Storage Temp)	-55 to 150
TL (Soldering Temp)	260
Thermal Characteristics
RJC (Junction-Case)	0.72	/W
RJA (Junction-Ambient)	62.5	/W
OFF Characteristics
VDSS (Breakdown Voltage)	100 - 110	V	VGS=0V, ID=250A
IDSS (Leakage Current)	1	A	VDS=100V, VGS=0V
IDSS (@TC=125C)	100	A	VDS=80V, VGS=0V
IGSS(F) (Gate-Source Forward)	100	nA	VGS=+20V
IGSS(R) (Gate-Source Reverse)	-100	nA	VGS=-20V
ON Characteristics
RDS(on)	4.6 - 5.2	m	VGS=10V, ID=50A
VGS(th) (Gate Threshold Voltage)	2 - 4	V	VDS=VGS, ID=250A
Dynamic Characteristics
Ciss (Input Capacitance)	5000	pF	VDS=50V, VGS=0, f=1MHz
Coss (Output Capacitance)	878	pF
Crss (Reverse Transfer Capacitance)	75	pF
Qg (Total Gate Charge)	74	nC	VDD=50V, ID=50A, VGS=10V
Qgs (Gate-Source Charge)	25	nC
Qgd (Gate-Drain Charge)	14	nC
RG (Gate Resistance)	1.7		VGS=0, VDS=0
Switching Characteristics
td(on) (Turn-On Delay)	24	ns	VDD=50V, ID=50A, VGS=10V, RG=5, Resistive Load
tr (Rise Time)	21	ns
td(off) (Turn-Off Delay)	50	ns
tf (Fall Time)	27	ns
Source-Drain Diode Characteristics
IS (Continuous Source Current)	120	A
ISM (Maximum Pulsed Current)	480	A
VSD (Diode Forward Voltage)	1.2	V	VGS=0V, IS=50A
Trr (Reverse Recovery Time)	66	ns	Is=50A,VGS=0, di/dt=100A/us
Qrr (Reverse Recovery Charge)	150	nC
Ordering Information
Package	Product Code	Packing
TO-220	MPT052N10-P	Tube
TO-263	MPT052N10-S	Tape Reel