Power MOSFET Minos MDT19N10L Featuring Low Gate Charge and High Avalanche Current for Switching Devices
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Product Description
Product Overview
The MDT19N10L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen, China (derived from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 19 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 50 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 31 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 21 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 4.8 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=5A | 80 | 90 | mΩ | |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=4.5V, ID=5A | 90 | 115 | mΩ | |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | 5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 680 | pF | ||
| Output Capacitance | Coss | 110 | pF | |||
| Reverse Transfer Capacitance | Crss | 85 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5Ω | 10 | nS | ||
| Turn-on Rise Time | tr | 7 | nS | |||
| Turn-Off Delay Time | td(off) | 34 | nS | |||
| Turn-Off Fall Time | tf | 9 | nS | |||
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | 16 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qg d | 5 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=19A | 1.2 | V | ||
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