N Channel MOSFET Minos MPG180N03S with Fast Switching Speed and High Avalanche Ruggedness Performance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPG180N03S is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, providing fast switching, low on-resistance, and high avalanche ruggedness.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -- | -- | 30 | V |
| VGS | Gate-Source Voltage | -- | -- | ±20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | -- | -- | 180 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | -- | -- | 145 | A |
| IDM | Pulsed Drain Current | -- | -- | 500 | A |
| EAS | Single Pulse Avalanche Energy | -- | -- | 246 | mJ |
| IAS | Avalanche Current | -- | -- | 70.2 | A |
| PD@TC=25 | Total Power Dissipation | -- | -- | 187 | W |
| TSTG | Storage Temperature Range | -55 | -- | 175 | |
| TJ | Operating Junction Temperature Range | -55 | -- | 175 | |
| RJA | Thermal Resistance Junction-Ambient | -- | 62 | -- | /W |
| RJC | Thermal Resistance Junction-Case | -- | 0.8 | -- | /W |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage | 30 | -- | -- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | -- | 0.014 | -- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V, ID=30A) | -- | 2.0 | 2.8 | m |
| Static Drain-Source On-Resistance (VGS=4.5V, ID=15A) | -- | 2.8 | 3.5 | V | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =250uA) | 1.0 | 1.5 | 3.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -- | -4 | -- | mV/ |
| IDSS | Drain-Source Leakage Current (VDS=24V, VGS=0V, TJ=25) | -- | -- | 1 | uA |
| Drain-Source Leakage Current (VDS=24V, VGS=0V, TJ=55) | -- | -- | 5 | uA | |
| IGSS | Gate-Source Leakage Current (VGS=±20V, VDS=0V) | -- | -- | ±100 | nA |
| gfs | Forward Transconductance (VDS=5V, ID=30A) | -- | 50 | -- | S |
| Rg | Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | -- | 1.7 | -- | |
| Qg | Total Gate Charge (4.5V) (VDS=15V, VGS=10V, ID=15A) | -- | 56.9 | -- | nC |
| Qgs | Gate-Source Charge | -- | 13.8 | -- | -- |
| Qgd | Gate-Drain Charge | -- | 23.5 | -- | -- |
| Switching Time | Turn-On Delay Time (VDD=15V, VGS=10V, RG=3.3,ID=1A) | -- | 20.1 | -- | ns |
| Rise Time | -- | 6.3 | -- | -- | |
| Switching Time | Turn-Off Delay Time | -- | 124.6 | -- | ns |
| Fall Time | -- | 15.8 | -- | -- | |
| Capacitance | Input Capacitance (VDS=15V,VGS=0V, f=1MHz) | -- | 5850 | -- | pF |
| Output Capacitance | -- | 720 | -- | -- | |
| Reverse Transfer Capacitance | -- | 525 | -- | -- | |
| IS | Continuous Source Current (VG=VD=0V) | -- | -- | 205 | A |
| ISM | Pulsed Source Current | -- | -- | 500 | A |
| VSD | Diode Forward Voltage (VGS=0V, IS=1A, TJ=25) | -- | -- | 1.2 | V |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina