N Channel Enhancement Mode MOSFET MIRACLE POWER MU4008Y with RoHS Compliance and Halogen Free Design
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The MU4008Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers excellent RDS(on) and low gate charge, making it suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines. This MOSFET is halogen-free and RoHS-compliant, with 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 210 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 137 | A | |||
| IDM | Drain Current-Pulsed | 840 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 125 | W | |||
| EAS | Single Pulsed Avalanche Energy | 495 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.0 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 41 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 30A | - | 1.2 | 1.6 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 20A | - | 1.9 | 2.5 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 2.8 | - | |
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 14.7 | - | nF |
| Coss | Output Capacitance | - | 843 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 830 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 13 | - | ns |
| tr | Turn-On Rise Time | - | 9.0 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 101 | - | ns | |
| tf | Turn-Off Fall Time | - | 15 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 30A | - | 95 | - | nC |
| Qgs | Gate-Source Charge | - | 15 | - | - | |
| Qgd | Gate-Drain Charge | - | 19 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 210 | A |
| ISM | Maximum Pulsed Current | - | - | 840 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 30A, dIF/dt = 100A/s | - | - | 35 | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 30A, dIF/dt = 100A/s | - | - | 24.2 | nC |
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Contact Person
Sellina